Selfconsistent study of coherent tunneling through a double barrier structure

H.J.M.F. Noteborn; H.P. Joosten; D. Lenstra

doi:10.1088/0031-8949/1990/T33/043

Selfconsistent study of coherent tunneling through a double barrier structure

H.J.M.F. Noteborn, H.P. Joosten, D. Lenstra

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

Abstract

We present a model of the double barrier resonant-tunneling diode (DBRTD), in which the tunneling is described in a 1D transfer matrix approach, based on full wave coherence, and in which the electronic potential is determined selfconsistently from the 3D charge distribution in the structure. Within this simple model, we are able to describe the diode's intrinsic bistability. Results are presented in the form of I-V-characteristics for GaAs-AlGaAs structures. Our approach is evaluated with respect to existing models.

Original language	English
Pages (from-to)	219-226
Number of pages	8
Journal	Physica Scripta
Volume	1990
Issue number	T33
DOIs	https://doi.org/10.1088/0031-8949/1990/T33/043
Publication status	Published - 1 Jan 1990

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AU - Noteborn, H.J.M.F.

AU - Joosten, H.P.

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N2 - We present a model of the double barrier resonant-tunneling diode (DBRTD), in which the tunneling is described in a 1D transfer matrix approach, based on full wave coherence, and in which the electronic potential is determined selfconsistently from the 3D charge distribution in the structure. Within this simple model, we are able to describe the diode's intrinsic bistability. Results are presented in the form of I-V-characteristics for GaAs-AlGaAs structures. Our approach is evaluated with respect to existing models.

AB - We present a model of the double barrier resonant-tunneling diode (DBRTD), in which the tunneling is described in a 1D transfer matrix approach, based on full wave coherence, and in which the electronic potential is determined selfconsistently from the 3D charge distribution in the structure. Within this simple model, we are able to describe the diode's intrinsic bistability. Results are presented in the form of I-V-characteristics for GaAs-AlGaAs structures. Our approach is evaluated with respect to existing models.

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VL - 1990

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JO - Physica Scripta

JF - Physica Scripta

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Selfconsistent study of coherent tunneling through a double barrier structure

Abstract

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