Self-organized strain engineering on GaAs (311)B : template formation for quantum dot nucleation control

Q. Gong; R. Nötzel; G.J. Hamhuis; T.J. Eijkemans; J.H. Wolter

doi:10.1063/1.1516637

Self-organized strain engineering on GaAs (311)B : template formation for quantum dot nucleation control

Q. Gong, R. Nötzel, G.J. Hamhuis, T.J. Eijkemans, J.H. Wolter

Photonics and Semiconductor Nanophysics

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Abstract

A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/As on GaAs (311)B, due to strain-driven growth instability. The established lateral strain distribution generates a unique template that controls the nucleation and growth of InAs quantum dots (QDs). The QDs exhibit pronounced improvement of the structural and optical properties with efficient carrier transfer from the template. Thus, self-organization of a two-dimensionally connected quantum dot network is demonstrated

Original language	English
Pages (from-to)	3254-3256
Journal	Applied Physics Letters
Volume	81
Issue number	17
DOIs	https://doi.org/10.1063/1.1516637
Publication status	Published - 2002

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title = "Self-organized strain engineering on GaAs (311)B : template formation for quantum dot nucleation control",

abstract = "A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/As on GaAs (311)B, due to strain-driven growth instability. The established lateral strain distribution generates a unique template that controls the nucleation and growth of InAs quantum dots (QDs). The QDs exhibit pronounced improvement of the structural and optical properties with efficient carrier transfer from the template. Thus, self-organization of a two-dimensionally connected quantum dot network is demonstrated",

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AU - Gong, Q.

AU - Nötzel, R.

AU - Hamhuis, G.J.

AU - Eijkemans, T.J.

AU - Wolter, J.H.

PY - 2002

Y1 - 2002

N2 - A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/As on GaAs (311)B, due to strain-driven growth instability. The established lateral strain distribution generates a unique template that controls the nucleation and growth of InAs quantum dots (QDs). The QDs exhibit pronounced improvement of the structural and optical properties with efficient carrier transfer from the template. Thus, self-organization of a two-dimensionally connected quantum dot network is demonstrated

AB - A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/As on GaAs (311)B, due to strain-driven growth instability. The established lateral strain distribution generates a unique template that controls the nucleation and growth of InAs quantum dots (QDs). The QDs exhibit pronounced improvement of the structural and optical properties with efficient carrier transfer from the template. Thus, self-organization of a two-dimensionally connected quantum dot network is demonstrated

U2 - 10.1063/1.1516637

DO - 10.1063/1.1516637

M3 - Article

SN - 0003-6951

VL - 81

SP - 3254

EP - 3256

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Self-organized strain engineering on GaAs (311)B : template formation for quantum dot nucleation control

Abstract

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