Self-organized strain engineering on GaAs (311)B : template formation for quantum dot nucleation control

Q. Gong, R. Nötzel, G.J. Hamhuis, T.J. Eijkemans, J.H. Wolter

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)
83 Downloads (Pure)

Abstract

A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/As on GaAs (311)B, due to strain-driven growth instability. The established lateral strain distribution generates a unique template that controls the nucleation and growth of InAs quantum dots (QDs). The QDs exhibit pronounced improvement of the structural and optical properties with efficient carrier transfer from the template. Thus, self-organization of a two-dimensionally connected quantum dot network is demonstrated
Original languageEnglish
Pages (from-to)3254-3256
JournalApplied Physics Letters
Volume81
Issue number17
DOIs
Publication statusPublished - 2002

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