Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100

W. Ma; R. Nötzel; A. Trampert; M. Ramsteiner; H. Zhu; H.-P. Schönherr; K. Ploog

doi:10.1063/1.1352047

Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100

W. Ma, R. Nötzel, A. Trampert, M. Ramsteiner, H. Zhu, H.-P. Schönherr, K. Ploog

Photonics and Semiconductor Nanophysics

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Abstract

Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.

Original language	English
Pages (from-to)	1297-1/3
Journal	Applied Physics Letters
Volume	78
Issue number	9
DOIs	https://doi.org/10.1063/1.1352047
Publication status	Published - 2001

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title = "Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100",

abstract = "Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.",

author = "W. Ma and R. N{\"o}tzel and A. Trampert and M. Ramsteiner and H. Zhu and H.-P. Sch{\"o}nherr and K. Ploog",

year = "2001",

doi = "10.1063/1.1352047",

language = "English",

volume = "78",

pages = "1297--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100

AU - Ma, W.

AU - Nötzel, R.

AU - Trampert, A.

AU - Ramsteiner, M.

AU - Zhu, H.

AU - Schönherr, H.-P.

AU - Ploog, K.

PY - 2001

Y1 - 2001

N2 - Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.

AB - Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.

U2 - 10.1063/1.1352047

DO - 10.1063/1.1352047

M3 - Article

SN - 0003-6951

VL - 78

SP - 1297-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100

Abstract

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