Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100

W. Ma, R. Nötzel, A. Trampert, M. Ramsteiner, H. Zhu, H.-P. Schönherr, K. Ploog

Research output: Contribution to journalArticleAcademicpeer-review

45 Citations (Scopus)
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Abstract

Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.
Original languageEnglish
Pages (from-to)1297-1/3
JournalApplied Physics Letters
Volume78
Issue number9
DOIs
Publication statusPublished - 2001

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