Self-organized anisotropic strain engineering for quantum dot ordening

A semiconductor quantum dot (QD) array is prepared on the substrates of GaAs (100) and (311) planes by a MBE method according to the self-structuring anisotropic strain engineering method. The QD array is expected to be the next generation quantum function device. The structure and the optical properties are studied by conducting AFM observation and the photoluminescence (PL) measurements. The results obtained suggest that the structure of the quantum fine wire of QD of (In, Ga) As is quite homogeneous, long and in an ordered state, and that the structure shows the PL characteristics in the temperature range from 5 to 297 K. The QD arrays obtained in the present investigation are expected to be a potential candidate for new quantum functional devices based on the single- and multiple-carriers, and the photon- and coherent- quantum interference effects.