Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy

M. Jo; J.G. Keizer; T. Mano; P.M. Koenraad; K. Sakoda

doi:10.1143/APEX.4.055501

Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy

M. Jo, J.G. Keizer, T. Mano, P.M. Koenraad, K. Sakoda

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [233] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (011) surfaces as Fabry–Pérot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature.

Original language	English
Article number	055501
Pages (from-to)	055501-1/3
Number of pages	3
Journal	Applied Physics Express
Volume	4
DOIs	https://doi.org/10.1143/APEX.4.055501
Publication status	Published - 2011

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title = "Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy",

abstract = "We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [233] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (011) surfaces as Fabry–P{\'e}rot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature.",

author = "M. Jo and J.G. Keizer and T. Mano and P.M. Koenraad and K. Sakoda",

year = "2011",

doi = "10.1143/APEX.4.055501",

language = "English",

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journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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T1 - Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy

AU - Jo, M.

AU - Keizer, J.G.

AU - Mano, T.

AU - Koenraad, P.M.

AU - Sakoda, K.

PY - 2011

Y1 - 2011

N2 - We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [233] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (011) surfaces as Fabry–Pérot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature.

AB - We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [233] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (011) surfaces as Fabry–Pérot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature.

U2 - 10.1143/APEX.4.055501

DO - 10.1143/APEX.4.055501

M3 - Article

VL - 4

SP - 055501-1/3

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

M1 - 055501

ER -

Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy

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