Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

J.M. Ulloa Herrero; P.M. Koenraad; D. Fuster; L. González; Y. González; M.U. González

doi:10.1088/0957-4484/19/44/445601

Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

J.M. Ulloa Herrero, P.M. Koenraad, D. Fuster, L. González, Y. González, M.U. González

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

The growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski–Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration.

Original language	English
Article number	445601
Pages (from-to)	445601-1/4
Journal	Nanotechnology
Volume	19
Issue number	44
DOIs	https://doi.org/10.1088/0957-4484/19/44/445601
Publication status	Published - 2008

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title = "Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires",

abstract = "The growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski–Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration.",

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T1 - Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

AU - Ulloa Herrero, J.M.

AU - Koenraad, P.M.

AU - Fuster, D.

AU - González, L.

AU - González, Y.

AU - González, M.U.

PY - 2008

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N2 - The growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski–Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration.

AB - The growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski–Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration.

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DO - 10.1088/0957-4484/19/44/445601

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SN - 0957-4484

VL - 19

SP - 445601-1/4

JO - Nanotechnology

JF - Nanotechnology

IS - 44

M1 - 445601

ER -

Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

Abstract

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