Self-assembled germanium-dot multilayers embedded in silicon

G. Bauer, A.A. Darhuber, V. Holy

    Research output: Contribution to journalArticleAcademicpeer-review

    7 Citations (Scopus)


    We report mainly on structural investigations on nanoscale Ge rich islands, the growth of which is driven by misfit strain (Stranski-Krastanow growth mode). Results of several methods, i.e. atomic force microscopy, transmission electron microscopy, and mainly x-ray diffraction and x-ray reflectivity measurements are presented and discussed.
    Original languageEnglish
    Pages (from-to)197-209
    JournalCrystal Research and Technology
    Issue number2
    Publication statusPublished - 1999


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