Self-assembeld ge-dots : growth, characterization, ordering and applications

P. Schittenhelm, C. Engel, F. Findeis, G. Abstreiter, A.A. Darhuber, G. Bauer, A.O. Kosogov, P. Werner

    Research output: Contribution to journalArticleAcademicpeer-review

    78 Citations (Scopus)
    98 Downloads (Pure)


    The Stranski–Krastanow growth mode, which leads to the self-assembled formation of dots, allows one to exceed the critical thickness without introducing dislocations. We report the coverage limits for the dislocation-free dot regime in dependence of the Ge content, and also the composition dependent thickness of the two-dimensional wetting layer. To reduce the size inhomogeneity of the self-assembled dots, we investigated ordering effects in Si/Ge-dot multilayers. The experiments do not only reveal a strong vertical ordering of the dots, but also a lateral correlation and a significantly increased size homogeneity is observed. Results on first device structures, a npn-infrared detector and a silicon based tunneling structure, both with embedded layers of self-assembled Ge dots, are presented.
    Original languageEnglish
    Pages (from-to)1575-15811
    Number of pages7
    JournalJournal of Vacuum Science and Technology B
    Issue number3
    Publication statusPublished - 1998


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