Selective area growth in generic integration for extended range tunable laser source

F.A. Lemaitre, S. Latkowski, Catherine Fortin, Nadine Lagay, R. Pajković, E. Smalbrugge, J. Decobert, H.P.M.M. Ambrosius, K.A. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.
Original languageEnglish
Title of host publication2018 IEEE Photonics Conference (IPC)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages3
ISBN (Electronic)978-1-5386-5358-6
ISBN (Print)978-1-5386-5359-3
DOIs
Publication statusPublished - 2018
Event31st IEEE Photonics Conference (IPC 2018) - Reston, United States
Duration: 30 Sep 20184 Oct 2018
Conference number: 31
https://ieee-ipc.org/

Conference

Conference31st IEEE Photonics Conference (IPC 2018)
Abbreviated titleIPC
CountryUnited States
CityReston
Period30/09/184/10/18
Internet address

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tunable lasers
platforms
chips
tuning
wavelengths

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Lemaitre, F. A., Latkowski, S., Fortin, C., Lagay, N., Pajković, R., Smalbrugge, E., ... Williams, K. A. (2018). Selective area growth in generic integration for extended range tunable laser source. In 2018 IEEE Photonics Conference (IPC) [8527207] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IPCon.2018.8527207
Lemaitre, F.A. ; Latkowski, S. ; Fortin, Catherine ; Lagay, Nadine ; Pajković, R. ; Smalbrugge, E. ; Decobert, J. ; Ambrosius, H.P.M.M. ; Williams, K.A. / Selective area growth in generic integration for extended range tunable laser source. 2018 IEEE Photonics Conference (IPC). Piscataway : Institute of Electrical and Electronics Engineers, 2018.
@inproceedings{009de4c7545c49be851d70de8f7d42e9,
title = "Selective area growth in generic integration for extended range tunable laser source",
abstract = "Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.",
author = "F.A. Lemaitre and S. Latkowski and Catherine Fortin and Nadine Lagay and R. Pajković and E. Smalbrugge and J. Decobert and H.P.M.M. Ambrosius and K.A. Williams",
year = "2018",
doi = "10.1109/IPCon.2018.8527207",
language = "English",
isbn = "978-1-5386-5359-3",
booktitle = "2018 IEEE Photonics Conference (IPC)",
publisher = "Institute of Electrical and Electronics Engineers",
address = "United States",

}

Lemaitre, FA, Latkowski, S, Fortin, C, Lagay, N, Pajković, R, Smalbrugge, E, Decobert, J, Ambrosius, HPMM & Williams, KA 2018, Selective area growth in generic integration for extended range tunable laser source. in 2018 IEEE Photonics Conference (IPC)., 8527207, Institute of Electrical and Electronics Engineers, Piscataway, 31st IEEE Photonics Conference (IPC 2018), Reston, United States, 30/09/18. https://doi.org/10.1109/IPCon.2018.8527207

Selective area growth in generic integration for extended range tunable laser source. / Lemaitre, F.A.; Latkowski, S.; Fortin, Catherine; Lagay, Nadine; Pajković, R.; Smalbrugge, E.; Decobert, J.; Ambrosius, H.P.M.M.; Williams, K.A.

2018 IEEE Photonics Conference (IPC). Piscataway : Institute of Electrical and Electronics Engineers, 2018. 8527207.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Selective area growth in generic integration for extended range tunable laser source

AU - Lemaitre, F.A.

AU - Latkowski, S.

AU - Fortin, Catherine

AU - Lagay, Nadine

AU - Pajković, R.

AU - Smalbrugge, E.

AU - Decobert, J.

AU - Ambrosius, H.P.M.M.

AU - Williams, K.A.

PY - 2018

Y1 - 2018

N2 - Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

AB - Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

U2 - 10.1109/IPCon.2018.8527207

DO - 10.1109/IPCon.2018.8527207

M3 - Conference contribution

SN - 978-1-5386-5359-3

BT - 2018 IEEE Photonics Conference (IPC)

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Lemaitre FA, Latkowski S, Fortin C, Lagay N, Pajković R, Smalbrugge E et al. Selective area growth in generic integration for extended range tunable laser source. In 2018 IEEE Photonics Conference (IPC). Piscataway: Institute of Electrical and Electronics Engineers. 2018. 8527207 https://doi.org/10.1109/IPCon.2018.8527207