Selective area growth in generic integration for extended range tunable laser source

F.A. Lemaitre; S. Latkowski; Catherine Fortin; Nadine Lagay; R. Pajković; E. Smalbrugge; J. Decobert; H.P.M.M. Ambrosius; K.A. Williams

doi:10.1109/IPCon.2018.8527207

Selective area growth in generic integration for extended range tunable laser source

F.A. Lemaitre, S. Latkowski, Catherine Fortin, Nadine Lagay, R. Pajković, E. Smalbrugge, J. Decobert, H.P.M.M. Ambrosius, K.A. Williams

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

4 Downloads (Pure)

Abstract

Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

Original language	English
Title of host publication	31st Annual Conference of the IEEE Photonics Society, IPC 2018
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	3
ISBN (Electronic)	978-1-5386-5358-6
ISBN (Print)	978-1-5386-5359-3
DOIs	https://doi.org/10.1109/IPCon.2018.8527207
Publication status	Published - 6 Nov 2018
Event	31st IEEE Photonics Conference, IPC 2018 - Reston, United States Duration: 30 Sept 2018 → 4 Oct 2018 Conference number: 31 https://ieee-ipc.org/ https://www.conferenceabstracts.com/cfp2/login.asp?EventKey=DSUSJYRO

Conference

Conference	31st IEEE Photonics Conference, IPC 2018
Abbreviated title	IPC 2018
Country/Territory	United States
City	Reston
Period	30/09/18 → 4/10/18
Internet address	https://ieee-ipc.org/ https://www.conferenceabstracts.com/cfp2/login.asp?EventKey=DSUSJYRO

Keywords

Generic photonic integration
Selective area growth
Tunable laser

Access to Document

10.1109/IPCon.2018.8527207

Cite this

Lemaitre, F. A., Latkowski, S., Fortin, C., Lagay, N., Pajković, R., Smalbrugge, E., Decobert, J., Ambrosius, H. P. M. M., & Williams, K. A. (2018). Selective area growth in generic integration for extended range tunable laser source. In 31st Annual Conference of the IEEE Photonics Society, IPC 2018 Article 8527207 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IPCon.2018.8527207

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abstract = "Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.",

keywords = "Generic photonic integration, Selective area growth, Tunable laser",

author = "F.A. Lemaitre and S. Latkowski and Catherine Fortin and Nadine Lagay and R. Pajkovi{\'c} and E. Smalbrugge and J. Decobert and H.P.M.M. Ambrosius and K.A. Williams",

year = "2018",

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doi = "10.1109/IPCon.2018.8527207",

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booktitle = "31st Annual Conference of the IEEE Photonics Society, IPC 2018",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "31st IEEE Photonics Conference, IPC 2018, IPC 2018 ; Conference date: 30-09-2018 Through 04-10-2018",

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Lemaitre, FA, Latkowski, S, Fortin, C, Lagay, N, Pajković, R, Smalbrugge, E, Decobert, J, Ambrosius, HPMM & Williams, KA 2018, Selective area growth in generic integration for extended range tunable laser source. in 31st Annual Conference of the IEEE Photonics Society, IPC 2018., 8527207, Institute of Electrical and Electronics Engineers, Piscataway, 31st IEEE Photonics Conference, IPC 2018, Reston, Virginia, United States, 30/09/18. https://doi.org/10.1109/IPCon.2018.8527207

Selective area growth in generic integration for extended range tunable laser source. / Lemaitre, F.A.; Latkowski, S.; Fortin, Catherine et al.
31st Annual Conference of the IEEE Photonics Society, IPC 2018. Piscataway: Institute of Electrical and Electronics Engineers, 2018. 8527207.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Selective area growth in generic integration for extended range tunable laser source

AU - Lemaitre, F.A.

AU - Latkowski, S.

AU - Fortin, Catherine

AU - Lagay, Nadine

AU - Pajković, R.

AU - Smalbrugge, E.

AU - Decobert, J.

AU - Ambrosius, H.P.M.M.

AU - Williams, K.A.

N1 - Conference code: 31

PY - 2018/11/6

Y1 - 2018/11/6

N2 - Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

AB - Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

KW - Generic photonic integration

KW - Selective area growth

KW - Tunable laser

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U2 - 10.1109/IPCon.2018.8527207

DO - 10.1109/IPCon.2018.8527207

M3 - Conference contribution

SN - 978-1-5386-5359-3

BT - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 31st IEEE Photonics Conference, IPC 2018

Y2 - 30 September 2018 through 4 October 2018

ER -

Selective area growth in generic integration for extended range tunable laser source

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