Selective area growth in generic integration for extended range tunable laser source

F.A. Lemaitre, S. Latkowski, Catherine Fortin, Nadine Lagay, R. Pajković, E. Smalbrugge, J. Decobert, H.P.M.M. Ambrosius, K.A. Williams

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Abstract

Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.
Original languageEnglish
Title of host publication31st Annual Conference of the IEEE Photonics Society, IPC 2018
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages3
ISBN (Electronic)978-1-5386-5358-6
ISBN (Print)978-1-5386-5359-3
DOIs
Publication statusPublished - 6 Nov 2018
Event31st IEEE Photonics Conference (IPC 2018) - Reston, United States
Duration: 30 Sep 20184 Oct 2018
Conference number: 31
https://ieee-ipc.org/

Conference

Conference31st IEEE Photonics Conference (IPC 2018)
Abbreviated titleIPC
CountryUnited States
CityReston
Period30/09/184/10/18
Internet address

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Keywords

  • Generic photonic integration
  • Selective area growth
  • Tunable laser

Cite this

Lemaitre, F. A., Latkowski, S., Fortin, C., Lagay, N., Pajković, R., Smalbrugge, E., ... Williams, K. A. (2018). Selective area growth in generic integration for extended range tunable laser source. In 31st Annual Conference of the IEEE Photonics Society, IPC 2018 [8527207] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IPCon.2018.8527207