Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Joon Sue Lee, Sukgeun Choi, Mihir Pendharkar, Daniel J. Pennachio, Brian Markman, Michael Seas, Sebastian Kölling, Marcel A. Verheijen, Lucas Casparis, Karl D. Petersson, Ivana Petkovic, Vanessa Schaller, Mark J.W. Rodwell, Charles M. Marcus, Peter Krogstrup, Leo P. Kouwenhoven, Erik P.A.M. Bakkers, Chris J. Palmstrøm (Corresponding author)

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Abstract

We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.

Original languageEnglish
Article number084606
Number of pages12
JournalPhysical Review Materials
Volume3
Issue number8
DOIs
Publication statusPublished - 26 Aug 2019

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Chemical beam epitaxy
epitaxy
Nanowires
nanowires
ridges
flat surfaces
selectivity
Electrons
Substrates
spin-orbit interactions
Epitaxial growth
Interfacial energy
Transport properties
Superconducting materials
Semiconductor quantum dots
surface energy
Structural properties
Orbits
electrons
platforms

Cite this

Lee, Joon Sue ; Choi, Sukgeun ; Pendharkar, Mihir ; Pennachio, Daniel J. ; Markman, Brian ; Seas, Michael ; Kölling, Sebastian ; Verheijen, Marcel A. ; Casparis, Lucas ; Petersson, Karl D. ; Petkovic, Ivana ; Schaller, Vanessa ; Rodwell, Mark J.W. ; Marcus, Charles M. ; Krogstrup, Peter ; Kouwenhoven, Leo P. ; Bakkers, Erik P.A.M. ; Palmstrøm, Chris J. / Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces. In: Physical Review Materials. 2019 ; Vol. 3, No. 8.
@article{7500b663ab4d4fb5a58a21b82fdefbf2,
title = "Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces",
abstract = "We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.",
author = "Lee, {Joon Sue} and Sukgeun Choi and Mihir Pendharkar and Pennachio, {Daniel J.} and Brian Markman and Michael Seas and Sebastian K{\"o}lling and Verheijen, {Marcel A.} and Lucas Casparis and Petersson, {Karl D.} and Ivana Petkovic and Vanessa Schaller and Rodwell, {Mark J.W.} and Marcus, {Charles M.} and Peter Krogstrup and Kouwenhoven, {Leo P.} and Bakkers, {Erik P.A.M.} and Palmstr{\o}m, {Chris J.}",
year = "2019",
month = "8",
day = "26",
doi = "10.1103/PhysRevMaterials.3.084606",
language = "English",
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Lee, JS, Choi, S, Pendharkar, M, Pennachio, DJ, Markman, B, Seas, M, Kölling, S, Verheijen, MA, Casparis, L, Petersson, KD, Petkovic, I, Schaller, V, Rodwell, MJW, Marcus, CM, Krogstrup, P, Kouwenhoven, LP, Bakkers, EPAM & Palmstrøm, CJ 2019, 'Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces', Physical Review Materials, vol. 3, no. 8, 084606. https://doi.org/10.1103/PhysRevMaterials.3.084606

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces. / Lee, Joon Sue; Choi, Sukgeun; Pendharkar, Mihir; Pennachio, Daniel J.; Markman, Brian; Seas, Michael; Kölling, Sebastian; Verheijen, Marcel A.; Casparis, Lucas; Petersson, Karl D.; Petkovic, Ivana; Schaller, Vanessa; Rodwell, Mark J.W.; Marcus, Charles M.; Krogstrup, Peter; Kouwenhoven, Leo P.; Bakkers, Erik P.A.M.; Palmstrøm, Chris J. (Corresponding author).

In: Physical Review Materials, Vol. 3, No. 8, 084606, 26.08.2019.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

AU - Lee, Joon Sue

AU - Choi, Sukgeun

AU - Pendharkar, Mihir

AU - Pennachio, Daniel J.

AU - Markman, Brian

AU - Seas, Michael

AU - Kölling, Sebastian

AU - Verheijen, Marcel A.

AU - Casparis, Lucas

AU - Petersson, Karl D.

AU - Petkovic, Ivana

AU - Schaller, Vanessa

AU - Rodwell, Mark J.W.

AU - Marcus, Charles M.

AU - Krogstrup, Peter

AU - Kouwenhoven, Leo P.

AU - Bakkers, Erik P.A.M.

AU - Palmstrøm, Chris J.

PY - 2019/8/26

Y1 - 2019/8/26

N2 - We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.

AB - We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.

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U2 - 10.1103/PhysRevMaterials.3.084606

DO - 10.1103/PhysRevMaterials.3.084606

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