Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Joon Sue Lee, Sukgeun Choi, Mihir Pendharkar, Daniel J. Pennachio, Brian Markman, Michael Seas, Sebastian Kölling, Marcel A. Verheijen, Lucas Casparis, Karl D. Petersson, Ivana Petkovic, Vanessa Schaller, Mark J.W. Rodwell, Charles M. Marcus, Peter Krogstrup, Leo P. Kouwenhoven, Erik P.A.M. Bakkers, Chris J. Palmstrøm (Corresponding author)

Research output: Contribution to journalArticleAcademicpeer-review

43 Citations (Scopus)
179 Downloads (Pure)


We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.

Original languageEnglish
Article number084606
Number of pages12
JournalPhysical Review Materials
Issue number8
Publication statusPublished - 26 Aug 2019


Dive into the research topics of 'Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces'. Together they form a unique fingerprint.

Cite this