Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

A.P. Wijnheijmer; X. Marti; V. Holy; M. Cukr; V. Novak; T. Jungwirth; P.M. Koenraad

doi:10.1063/1.3693611

Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

A.P. Wijnheijmer, X. Marti, V. Holy, M. Cukr, V. Novak, T. Jungwirth, P.M. Koenraad

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Abstract

We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Ne´el temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets.

Original language	English
Article number	112107
Pages (from-to)	112107-1/4
Number of pages	4
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3693611
Publication status	Published - 2012

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@article{04613ec4071342069e49fe8ee2d4533a,

title = "Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor",

abstract = "We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Ne´el temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets.",

author = "A.P. Wijnheijmer and X. Marti and V. Holy and M. Cukr and V. Novak and T. Jungwirth and P.M. Koenraad",

year = "2012",

doi = "10.1063/1.3693611",

language = "English",

volume = "100",

pages = "112107--1/4",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

AU - Wijnheijmer, A.P.

AU - Marti, X.

AU - Holy, V.

AU - Cukr, M.

AU - Novak, V.

AU - Jungwirth, T.

AU - Koenraad, P.M.

PY - 2012

Y1 - 2012

N2 - We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Ne´el temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets.

AB - We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Ne´el temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets.

U2 - 10.1063/1.3693611

DO - 10.1063/1.3693611

M3 - Article

VL - 100

SP - 112107-1/4

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112107

ER -

Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

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