Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

A.P. Wijnheijmer, X. Marti, V. Holy, M. Cukr, V. Novak, T. Jungwirth, P.M. Koenraad

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)
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Abstract

We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Ne´el temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets.
Original languageEnglish
Article number112107
Pages (from-to)112107-1/4
Number of pages4
JournalApplied Physics Letters
Volume100
Issue number11
DOIs
Publication statusPublished - 2012

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