Scanning tunneling microscopy images of Al/sub 0.2/Ga/sub 0.8/As-{110} : influence of applied bias voltage and comparison between filled- and empty-states images

G.J. Raad, de, P.M. Koenraad, J.H. Wolter

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2 Citations (Scopus)

Abstract

Bias-voltage dependent images of Al/sub 0.2/Ga/sub 0.8/As-{110} are presented. The images show both the filled- and empty-states of the surface. Apart from voltage-dependent changes in the apparent direction of the atomic rows also observed for binary III-V semiconductors, bright and dark areas about 2 nm in diameter appear at small voltage in filled-states images, and small ridges along [-110] appear at small voltage in empty-states images. The spatial extent of the bright and dark areas observed in filled-states images is thought to be determined by the electron-electron interaction. It is also shown that when a given patch of Al/sub 0.2/Ga/sub 0.8/As-{110} surface is imaged simultaneously in the filled- and empty-states mode, the locations and spatial extent of the alloy-related minima (the "dark patches") do not coincide. This casts doubt on the assumption that a locally decreased tunneling probability represents an increased local content of Al
Original languageEnglish
Pages (from-to)39-51
JournalSurface Science
Volume556
Issue number1
DOIs
Publication statusPublished - 2004

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