ScAlN nanowires: a cathodoluminescence study

T. Bohnen, G.R. Yazdi, R. Yakimova, G.W.G. van Dreumel, P.R. Hageman, E. Vlieg, R.E. Algra, M.A. Verheijen, J.H. Edgar

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

Abstract

Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 μ m, a diameter between 50 and 150 nm, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.

Original languageEnglish
Pages (from-to)3147-3151
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number11
DOIs
Publication statusPublished - 15 May 2009
Externally publishedYes

Keywords

  • A1. Nanostructures
  • A3. Hydride vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting aluminum compounds

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