Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 μ m, a diameter between 50 and 150 nm, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.
- A1. Nanostructures
- A3. Hydride vapor phase epitaxy
- B1. Nitrides
- B2. Semiconducting aluminum compounds