ScAlN nanowires: a cathodoluminescence study

T. Bohnen; G.R. Yazdi; R. Yakimova; G.W.G. van Dreumel; P.R. Hageman; E. Vlieg; R.E. Algra; M.A. Verheijen; J.H. Edgar

doi:10.1016/j.jcrysgro.2009.03.023

ScAlN nanowires: a cathodoluminescence study

T. Bohnen, G.R. Yazdi, R. Yakimova, G.W.G. van Dreumel, P.R. Hageman, E. Vlieg, R.E. Algra, M.A. Verheijen, J.H. Edgar

Research output: Contribution to journal › Article › Academic › peer-review

15 Citations (Scopus)

Abstract

Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 μ m, a diameter between 50 and 150 nm, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.

Original language	English
Pages (from-to)	3147-3151
Number of pages	5
Journal	Journal of Crystal Growth
Volume	311
Issue number	11
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.03.023
Publication status	Published - 15 May 2009
Externally published	Yes

Keywords

A1. Nanostructures
A3. Hydride vapor phase epitaxy
B1. Nitrides
B2. Semiconducting aluminum compounds

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10.1016/j.jcrysgro.2009.03.023

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title = "ScAlN nanowires: a cathodoluminescence study",

abstract = "Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 μ m, a diameter between 50 and 150 nm, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.",

keywords = "A1. Nanostructures, A3. Hydride vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds",

author = "T. Bohnen and G.R. Yazdi and R. Yakimova and {van Dreumel}, G.W.G. and P.R. Hageman and E. Vlieg and R.E. Algra and M.A. Verheijen and J.H. Edgar",

year = "2009",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2009.03.023",

language = "English",

volume = "311",

pages = "3147--3151",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - ScAlN nanowires

T2 - a cathodoluminescence study

AU - Bohnen, T.

AU - Yazdi, G.R.

AU - Yakimova, R.

AU - van Dreumel, G.W.G.

AU - Hageman, P.R.

AU - Vlieg, E.

AU - Algra, R.E.

AU - Verheijen, M.A.

AU - Edgar, J.H.

PY - 2009/5/15

Y1 - 2009/5/15

N2 - Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 μ m, a diameter between 50 and 150 nm, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.

AB - Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 μ m, a diameter between 50 and 150 nm, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.

KW - A1. Nanostructures

KW - A3. Hydride vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting aluminum compounds

UR - http://www.scopus.com/inward/record.url?scp=65849152537&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.03.023

DO - 10.1016/j.jcrysgro.2009.03.023

M3 - Article

AN - SCOPUS:65849152537

SN - 0022-0248

VL - 311

SP - 3147

EP - 3151

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 11

ER -

ScAlN nanowires: a cathodoluminescence study

Abstract

Keywords

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