Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

E. J. Meijer; G. H. Gelinck; E. Van Veenendaal; B. H. Huisman; D. M. De Leeuw; T. M. Klapwijk

doi:10.1063/1.1581389

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

E. J. Meijer, G. H. Gelinck, E. Van Veenendaal, B. H. Huisman, D. M. De Leeuw, T. M. Klapwijk

Research output: Contribution to journal › Article › Academic › peer-review

163 Citations (Scopus)

Abstract

The scaling behavior and transfer characteristics of solution-processed disordered organic thin-film transistors were discussed. Field-effect mobility and parasitic series resistance were studied. Results showed that parasitic resistance depends on applied gate voltage and decreases with increasing field-effect mobility.

Original language	English
Pages (from-to)	4576-4578
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	25
DOIs	https://doi.org/10.1063/1.1581389
Publication status	Published - 23 Jun 2003
Externally published	Yes

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title = "Scaling behavior and parasitic series resistance in disordered organic field-effect transistors",

abstract = "The scaling behavior and transfer characteristics of solution-processed disordered organic thin-film transistors were discussed. Field-effect mobility and parasitic series resistance were studied. Results showed that parasitic resistance depends on applied gate voltage and decreases with increasing field-effect mobility.",

author = "Meijer, {E. J.} and Gelinck, {G. H.} and {Van Veenendaal}, E. and Huisman, {B. H.} and {De Leeuw}, {D. M.} and Klapwijk, {T. M.}",

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AU - Gelinck, G. H.

AU - Van Veenendaal, E.

AU - Huisman, B. H.

AU - De Leeuw, D. M.

AU - Klapwijk, T. M.

PY - 2003/6/23

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DO - 10.1063/1.1581389

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

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Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

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