Scalable non-linear and bias-dependent LF-noise model for improved InP HEMT based MMIC oscillator design

D. Schreurs, H. Meer, van, K. van der Zanden, W. Raedt, de, B. Nauwelaers

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    1 Downloads (Pure)

    Abstract

    This paper focuses on two modelling aspects to improve low phase noise MMIC oscillator design. As the modelling of InP based HEMTs has mainly been limited to the representation of the small-signal and thermal noise behaviour, we present a scaleable non-linear and bias-dependent low-frequency (LF) noise model.
    Original languageEnglish
    Title of host publication1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO / MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section; with technical co-sponsorship from IEEE Electron Devices Society; in cooperation with IEEE Microwave Theory & Techniques Society ... [et al.];
    Place of PublicationNew York
    PublisherInstitute of Electrical and Electronics Engineers
    Pages187-192
    ISBN (Print)0-7803-4135-X
    DOIs
    Publication statusPublished - 1997
    EventIEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO '97, London, UK, 25 November 1997 - London, United Kingdom
    Duration: 25 Nov 199725 Nov 1997

    Conference

    ConferenceIEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO '97, London, UK, 25 November 1997
    Abbreviated titleEDMO '97
    CountryUnited Kingdom
    CityLondon
    Period25/11/9725/11/97
    Other

    Fingerprint Dive into the research topics of 'Scalable non-linear and bias-dependent LF-noise model for improved InP HEMT based MMIC oscillator design'. Together they form a unique fingerprint.

    Cite this