S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

Yu Wang; Srivathsa Bhat; Timo Aalto; Nicola Calabretta

doi:10.1109/OECC56963.2023.10209836

S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

Yu Wang, Srivathsa Bhat, Timo Aalto, Nicola Calabretta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

2 Downloads (Pure)

Abstract

We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.

Original language	English
Title of host publication	2023 Opto-Electronics and Communications Conference, OECC 2023
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	4
ISBN (Electronic)	978-1-6654-6213-6
DOIs	https://doi.org/10.1109/OECC56963.2023.10209836
Publication status	Published - 14 Aug 2023
Event	2023 Opto-Electronics and Communications Conference, OECC 2023 - Shanghai, China Duration: 2 Jul 2023 → 6 Jul 2023

Conference

Conference	2023 Opto-Electronics and Communications Conference, OECC 2023
Country/Territory	China
City	Shanghai
Period	2/07/23 → 6/07/23

Funding

ACKNOWLEDGMENT This work has been partially supported by the EU Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement 814276 and the EU B5G-OPEN grant agreement 101016663. And the work is part of the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN), decisions 320168 and 346545.

Funders	Funder number
Marie Skłodowska‐Curie	101016663, 814276
European Union's Horizon 2020 - Research and Innovation Framework Programme

Keywords

integrated optics
optical switch
silicon photonics

Access to Document

10.1109/OECC56963.2023.10209836

Cite this

@inproceedings{f319307958264199845989a246d30a1c,

title = "S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity",

abstract = "We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.",

keywords = "integrated optics, optical switch, silicon photonics",

author = "Yu Wang and Srivathsa Bhat and Timo Aalto and Nicola Calabretta",

year = "2023",

month = aug,

day = "14",

doi = "10.1109/OECC56963.2023.10209836",

language = "English",

booktitle = "2023 Opto-Electronics and Communications Conference, OECC 2023",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2023 Opto-Electronics and Communications Conference, OECC 2023 ; Conference date: 02-07-2023 Through 06-07-2023",

}

Wang, Y, Bhat, S, Aalto, T & Calabretta, N 2023, S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity. in 2023 Opto-Electronics and Communications Conference, OECC 2023., 10209836, Institute of Electrical and Electronics Engineers, 2023 Opto-Electronics and Communications Conference, OECC 2023, Shanghai, China, 2/07/23. https://doi.org/10.1109/OECC56963.2023.10209836

S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity. / Wang, Yu; Bhat, Srivathsa; Aalto, Timo et al.
2023 Opto-Electronics and Communications Conference, OECC 2023. Institute of Electrical and Electronics Engineers, 2023. 10209836.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

AU - Wang, Yu

AU - Bhat, Srivathsa

AU - Aalto, Timo

AU - Calabretta, Nicola

PY - 2023/8/14

Y1 - 2023/8/14

N2 - We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.

AB - We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.

KW - integrated optics

KW - optical switch

KW - silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=85170259467&partnerID=8YFLogxK

U2 - 10.1109/OECC56963.2023.10209836

DO - 10.1109/OECC56963.2023.10209836

M3 - Conference contribution

AN - SCOPUS:85170259467

BT - 2023 Opto-Electronics and Communications Conference, OECC 2023

PB - Institute of Electrical and Electronics Engineers

T2 - 2023 Opto-Electronics and Communications Conference, OECC 2023

Y2 - 2 July 2023 through 6 July 2023

ER -

S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

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