Ruggedness improvement by protection

A. Bezooijen, van, A.J.M. Graauw, de, L.C.H. Ruijs, S. Pramm, C. Chanlo, H.J. Dolle, ten, F.E. van Straten, R. Mahmoudi, A.H.M. Roermund, van

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Abstract

Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm
Original languageEnglish
Title of host publicationProceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages275-278
ISBN (Print)1-4244-0459-2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands - Maastricht, Netherlands
Duration: 8 Oct 200610 Oct 2006

Conference

Conference2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands
Abbreviated titleBCTM 2006
CountryNetherlands
CityMaastricht
Period8/10/0610/10/06

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    Bezooijen, van, A., Graauw, de, A. J. M., Ruijs, L. C. H., Pramm, S., Chanlo, C., Dolle, ten, H. J., van Straten, F. E., Mahmoudi, R., & Roermund, van, A. H. M. (2006). Ruggedness improvement by protection. In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006) (pp. 275-278). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/BIPOL.2006.311174