Ruggedness improvement by protection

A. Bezooijen, van; A.J.M. Graauw, de; L.C.H. Ruijs; S. Pramm; C. Chanlo; H.J. Dolle, ten; F.E. van Straten; R. Mahmoudi; A.H.M. Roermund, van

doi:10.1109/BIPOL.2006.311174

Ruggedness improvement by protection

A. Bezooijen, van, A.J.M. Graauw, de, L.C.H. Ruijs, S. Pramm, C. Chanlo, H.J. Dolle, ten, F.E. van Straten, R. Mahmoudi, A.H.M. Roermund, van

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Downloads (Pure)

Abstract

Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm

Original language	English
Title of host publication	Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006)
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	275-278
ISBN (Print)	1-4244-0459-2
DOIs	https://doi.org/10.1109/BIPOL.2006.311174
Publication status	Published - 2006
Event	2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands - Maastricht, Netherlands Duration: 8 Oct 2006 → 10 Oct 2006

Conference

Conference	2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands
Abbreviated title	BCTM 2006
Country/Territory	Netherlands
City	Maastricht
Period	8/10/06 → 10/10/06

Access to Document

10.1109/BIPOL.2006.311174

Cite this

Bezooijen, van, A., Graauw, de, A. J. M., Ruijs, L. C. H., Pramm, S., Chanlo, C., Dolle, ten, H. J., van Straten, F. E., Mahmoudi, R., & Roermund, van, A. H. M. (2006). Ruggedness improvement by protection. In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006) (pp. 275-278). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/BIPOL.2006.311174

@inproceedings{c61e2143d11442cba204f0170255c1a4,

title = "Ruggedness improvement by protection",

abstract = "Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm",

author = "{Bezooijen, van}, A. and {Graauw, de}, A.J.M. and L.C.H. Ruijs and S. Pramm and C. Chanlo and {Dolle, ten}, H.J. and {van Straten}, F.E. and R. Mahmoudi and {Roermund, van}, A.H.M.",

year = "2006",

doi = "10.1109/BIPOL.2006.311174",

language = "English",

isbn = "1-4244-0459-2",

pages = "275--278",

booktitle = "Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands, BCTM 2006 ; Conference date: 08-10-2006 Through 10-10-2006",

}

Bezooijen, van, A, Graauw, de, AJM, Ruijs, LCH, Pramm, S, Chanlo, C, Dolle, ten, HJ, van Straten, FE, Mahmoudi, R & Roermund, van, AHM 2006, Ruggedness improvement by protection. in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006). Institute of Electrical and Electronics Engineers, Piscataway, pp. 275-278, 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands, Maastricht, Netherlands, 8/10/06. https://doi.org/10.1109/BIPOL.2006.311174

Ruggedness improvement by protection. / Bezooijen, van, A.; Graauw, de, A.J.M.; Ruijs, L.C.H. et al.

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006). Piscataway : Institute of Electrical and Electronics Engineers, 2006. p. 275-278.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Ruggedness improvement by protection

AU - Bezooijen, van, A.

AU - Graauw, de, A.J.M.

AU - Ruijs, L.C.H.

AU - Pramm, S.

AU - Chanlo, C.

AU - Dolle, ten, H.J.

AU - van Straten, F.E.

AU - Mahmoudi, R.

AU - Roermund, van, A.H.M.

PY - 2006

Y1 - 2006

N2 - Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm

AB - Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm

U2 - 10.1109/BIPOL.2006.311174

DO - 10.1109/BIPOL.2006.311174

M3 - Conference contribution

SN - 1-4244-0459-2

SP - 275

EP - 278

BT - Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006)

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands

Y2 - 8 October 2006 through 10 October 2006

ER -

Ruggedness improvement by protection

Abstract

Conference

Access to Document

Fingerprint

Cite this