Abstract
Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm
Original language | English |
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Title of host publication | Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006) |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 275-278 |
ISBN (Print) | 1-4244-0459-2 |
DOIs | |
Publication status | Published - 2006 |
Event | 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands - Maastricht, Netherlands Duration: 8 Oct 2006 → 10 Oct 2006 |
Conference
Conference | 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands |
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Abbreviated title | BCTM 2006 |
Country/Territory | Netherlands |
City | Maastricht |
Period | 8/10/06 → 10/10/06 |