Routes to chaos in an optically injected semiconductor laser

B. Krauskopf, S. Wieczorek, D. Lenstra

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

Chaotic dynamics have been found in a single mode semiconductor laser subject to optical injection experimentally or by numerical simulation. In this paper we study this laser system by means of rate equations, which mathematically are a three-dimensional vector field. To study different routes to chaos we start from the knowledge of bifurcation curves in the plane of injection strength and detuning in Ref. [1] of this issue. Our main tool is combining the continuation of bifurcation curves with computing the respective phase space objects. In this way, we obtain detailed knowledge of regions in parameter space of different types of chaos, and what transitions can be found at the boundaries of such regions. This gives new insight into chaotic output found in experiments. Furthermore, it allows relatively easy access to chaotic dynamics for applications such as chaotic data encryption schemes.
Original languageEnglish
Title of host publicationPhysics and simulation of optoelectronic devices VIII, 24 - 28 January 2000, San Jose, California
EditorsR.H. Binder, P. Blood, M. Osinski
Place of PublicationBellingham
PublisherSPIE
Pages612-619
ISBN (Print)0-8194-3561-9
DOIs
Publication statusPublished - 2000
EventPhysics and Simulation of Optoelectronic Devices VIII - San Jose, United States
Duration: 24 Jan 200028 Jan 2000

Publication series

NameProceedings of SPIE
Volume3944
ISSN (Print)0277-786X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices VIII
Country/TerritoryUnited States
CitySan Jose
Period24/01/0028/01/00

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