Role of surface morphology for InAs quantum dot or dash formation on InGaAsP/InP (100)

N. Sritirawisarn, F.W.M. Otten, van, T.J. Eijkemans, R. Nötzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


We investigate the formation of self-assembled InAs quantum structures on lattice-matched InGaAsP on InP (100) substrates grown by chemical beam epitaxy. The surface morphology of the InGaAsP buffer layer plays a key role for the formation of InAs quantum dots (QDs) or dashes (QDashes). QDash formation is always accompanied by a rough buffer layer surface. Growth conditions such as higher growth temperature, larger As flux, and compressive buffer layer strain promote the formation of QDs. However, once, the buffer layer has a rough morphology, QDashes always form during InAs deposition. On the other hand, well-shaped and symmetric QDs are reproducibly formed on smooth InGaAsP buffer layers for the same InAs growth conditions. Hence, not the growth conditions during InAs deposition, but rather the surface morphology of the buffer layer determines the formation of QDs or QDashes, which both exhibit high optical quality.
Original languageEnglish
Title of host publicationProceedings of the 19th International Conference on Indium Phosphide & Related Materials (IPRM 2007) 14-18 May 2007, Matsue, Japan
Place of PublicationPiscataway, New Jersey, USA
PublisherIEEE Press
ISBN (Print)1-424-40874-1
Publication statusPublished - 2007
Eventconference; IPRM 2007, Matsue, Japan; 2007-05-14; 2007-05-18 -
Duration: 14 May 200718 May 2007


Conferenceconference; IPRM 2007, Matsue, Japan; 2007-05-14; 2007-05-18
OtherIPRM 2007, Matsue, Japan


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