Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide

M. Ridene, C.S. Kha, C.F.J. Flipse

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)

Abstract

In this paper, we study the electronic properties of epitaxial graphene (EG) on silicon carbide by means of ab initio calculations based on the local spin density approximation + U method taking into account the Coulomb interaction between Si localized electrons. We show that this interaction is not completely suppressed but is screened by carbon layers grown on-top of silicon carbide. This finding leads to a good qualitative understanding of the experimental results reported on EG on silicon carbide. Our results highlight the presence of the Si localized states and might explain the anomalous Hanle curve and the high values of spin relaxation time in EG.

Original languageEnglish
Article number125705
Pages (from-to)1-6
JournalNanotechnology
Volume27
Issue number12
DOIs
Publication statusPublished - 18 Feb 2016

Keywords

  • density functional theory
  • epiaxial graphene
  • silicon dangling bond

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