Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

G. Mannino, N E.B. Cowern, F. Roozeboom, J.G.M. Van Berkum

Research output: Contribution to journalArticleAcademicpeer-review

51 Citations (Scopus)

Abstract

We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are "fabricated" in a narrow band by overlapping the Si implant damage tail with a lightly doped B buried layer. The BIC band is found to be a net sink for interstitials at supersaturations S(t) > 104. Our results suggest that silicon self-interstitial defects are the primary source of interstitials driving transient enhanced diffusion, and that BICs act as a secondary "buffer" for the interstitial supersaturation.

Original languageEnglish
Pages (from-to)855-857
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number7
DOIs
Publication statusPublished - 14 Feb 2000
Externally publishedYes

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