Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

G. Mannino; N E.B. Cowern; F. Roozeboom; J.G.M. Van Berkum

doi:10.1063/1.125607

Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

G. Mannino, N E.B. Cowern, F. Roozeboom, J.G.M. Van Berkum

Research output: Contribution to journal › Article › Academic › peer-review

53 Citations (Scopus)

Abstract

We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are "fabricated" in a narrow band by overlapping the Si implant damage tail with a lightly doped B buried layer. The BIC band is found to be a net sink for interstitials at supersaturations S(t) > 10⁴. Our results suggest that silicon self-interstitial defects are the primary source of interstitials driving transient enhanced diffusion, and that BICs act as a secondary "buffer" for the interstitial supersaturation.

Original language	English
Pages (from-to)	855-857
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	7
DOIs	https://doi.org/10.1063/1.125607
Publication status	Published - 14 Feb 2000
Externally published	Yes

Access to Document

10.1063/1.125607

Cite this

@article{4a2c237393784d6ba08a653de3f1532e,

title = "Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon",

abstract = "We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are {"}fabricated{"} in a narrow band by overlapping the Si implant damage tail with a lightly doped B buried layer. The BIC band is found to be a net sink for interstitials at supersaturations S(t) > 104. Our results suggest that silicon self-interstitial defects are the primary source of interstitials driving transient enhanced diffusion, and that BICs act as a secondary {"}buffer{"} for the interstitial supersaturation.",

author = "G. Mannino and Cowern, {N E.B.} and F. Roozeboom and {Van Berkum}, J.G.M.",

year = "2000",

month = feb,

day = "14",

doi = "10.1063/1.125607",

language = "English",

volume = "76",

pages = "855--857",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

AU - Mannino, G.

AU - Cowern, N E.B.

AU - Roozeboom, F.

AU - Van Berkum, J.G.M.

PY - 2000/2/14

Y1 - 2000/2/14

N2 - We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are "fabricated" in a narrow band by overlapping the Si implant damage tail with a lightly doped B buried layer. The BIC band is found to be a net sink for interstitials at supersaturations S(t) > 104. Our results suggest that silicon self-interstitial defects are the primary source of interstitials driving transient enhanced diffusion, and that BICs act as a secondary "buffer" for the interstitial supersaturation.

AB - We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are "fabricated" in a narrow band by overlapping the Si implant damage tail with a lightly doped B buried layer. The BIC band is found to be a net sink for interstitials at supersaturations S(t) > 104. Our results suggest that silicon self-interstitial defects are the primary source of interstitials driving transient enhanced diffusion, and that BICs act as a secondary "buffer" for the interstitial supersaturation.

UR - http://www.scopus.com/inward/record.url?scp=0000934624&partnerID=8YFLogxK

U2 - 10.1063/1.125607

DO - 10.1063/1.125607

M3 - Article

AN - SCOPUS:0000934624

VL - 76

SP - 855

EP - 857

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this