Role of hole injection in electroforming of LiF-polymer memory diodes

B.F. Bory, S.C.J. Meskers, R.A.J. Janssen, H.L. Gomes, D.M. Leeuw, de

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)


Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.
Original languageEnglish
Pages (from-to)12443-12447
Number of pages4
JournalJournal of Physical Chemistry C
Issue number23
Publication statusPublished - 2012


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