Role of hole injection in electroforming of LiF-polymer memory diodes

B.F. Bory; S.C.J. Meskers; R.A.J. Janssen; H.L. Gomes; D.M. Leeuw, de

doi:10.1021/jp302767y

Role of hole injection in electroforming of LiF-polymer memory diodes

B.F. Bory, S.C.J. Meskers, R.A.J. Janssen, H.L. Gomes, D.M. Leeuw, de

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.

Original language	English
Pages (from-to)	12443-12447
Number of pages	4
Journal	Journal of Physical Chemistry C
Volume	116
Issue number	23
DOIs	https://doi.org/10.1021/jp302767y
Publication status	Published - 2012

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title = "Role of hole injection in electroforming of LiF-polymer memory diodes",

abstract = "Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.",

author = "B.F. Bory and S.C.J. Meskers and R.A.J. Janssen and H.L. Gomes and {Leeuw, de}, D.M.",

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AU - Bory, B.F.

AU - Meskers, S.C.J.

AU - Janssen, R.A.J.

AU - Gomes, H.L.

AU - Leeuw, de, D.M.

PY - 2012

Y1 - 2012

N2 - Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.

AB - Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.

U2 - 10.1021/jp302767y

DO - 10.1021/jp302767y

M3 - Article

SN - 1932-7447

VL - 116

SP - 12443

EP - 12447

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 23

ER -

Role of hole injection in electroforming of LiF-polymer memory diodes

Abstract

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