Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3

N.M. Terlinden, G. Dingemans, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Contribution to journalArticleAcademicpeer-review

96 Citations (Scopus)
146 Downloads (Pure)

Fingerprint Dive into the research topics of 'Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3'. Together they form a unique fingerprint.

Physics & Astronomy