Abstract
Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ~ 5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical passivation through the measurement of the electric field in the c-Si space-charge region. It is demonstrated that this electric field—and hence the negative fixed charge density—is virtually unaffected by the Al2O3 thickness between 2 and 20 nm indicating that a decrease in chemical passivation causes the reduced passivation performance for
Original language | English |
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Article number | 112101 |
Pages (from-to) | 112101-1/3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2010 |