Role of a-Si:H bulk in surface passivation on c-Si wafers

A. Illiberi; K. Sharma; M. Creatore; M.C.M. Sanden, van de

doi:10.1002/pssr.201004139

Role of a-Si:H bulk in surface passivation on c-Si wafers

A. Illiberi, K. Sharma, M. Creatore, M.C.M. Sanden, van de

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Abstract

The low thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films limits their widespread use for surface passivation of c-Si wafers on the rear side of solar cells. We show that the thermal stability of a-Si:H surface passivation is increased significantly by a hydrogen rich a-Si:H bulk, which acts as a hydrogen reservoir for the a-Si:H/c-Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 1015 cm-3) is achieved after annealing at 450 °C for 10 min.

Original language	English
Pages (from-to)	172-174
Number of pages	3
Journal	Physica Status Solidi : Rapid Research Letters
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssr.201004139
Publication status	Published - 2010

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title = "Role of a-Si:H bulk in surface passivation on c-Si wafers",

abstract = "The low thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films limits their widespread use for surface passivation of c-Si wafers on the rear side of solar cells. We show that the thermal stability of a-Si:H surface passivation is increased significantly by a hydrogen rich a-Si:H bulk, which acts as a hydrogen reservoir for the a-Si:H/c-Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 1015 cm-3) is achieved after annealing at 450 °C for 10 min.",

author = "A. Illiberi and K. Sharma and M. Creatore and \{Sanden, van de\}, M.C.M.",

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language = "English",

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journal = "Physica Status Solidi : Rapid Research Letters",

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T1 - Role of a-Si:H bulk in surface passivation on c-Si wafers

AU - Illiberi, A.

AU - Sharma, K.

AU - Creatore, M.

AU - Sanden, van de, M.C.M.

PY - 2010

Y1 - 2010

N2 - The low thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films limits their widespread use for surface passivation of c-Si wafers on the rear side of solar cells. We show that the thermal stability of a-Si:H surface passivation is increased significantly by a hydrogen rich a-Si:H bulk, which acts as a hydrogen reservoir for the a-Si:H/c-Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 1015 cm-3) is achieved after annealing at 450 °C for 10 min.

AB - The low thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films limits their widespread use for surface passivation of c-Si wafers on the rear side of solar cells. We show that the thermal stability of a-Si:H surface passivation is increased significantly by a hydrogen rich a-Si:H bulk, which acts as a hydrogen reservoir for the a-Si:H/c-Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 1015 cm-3) is achieved after annealing at 450 °C for 10 min.

U2 - 10.1002/pssr.201004139

DO - 10.1002/pssr.201004139

M3 - Article

SN - 1862-6254

VL - 4

SP - 172

EP - 174

JO - Physica Status Solidi : Rapid Research Letters

JF - Physica Status Solidi : Rapid Research Letters

IS - 7

ER -

Role of a-Si:H bulk in surface passivation on c-Si wafers

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