Role of a-Si:H bulk in surface passivation on c-Si wafers

A. Illiberi, K. Sharma, M. Creatore, M.C.M. Sanden, van de

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)

Abstract

The low thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films limits their widespread use for surface passivation of c-Si wafers on the rear side of solar cells. We show that the thermal stability of a-Si:H surface passivation is increased significantly by a hydrogen rich a-Si:H bulk, which acts as a hydrogen reservoir for the a-Si:H/c-Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 1015 cm-3) is achieved after annealing at 450 °C for 10 min.
Original languageEnglish
Pages (from-to)172-174
Number of pages3
JournalPhysica Status Solidi : Rapid Research Letters
Volume4
Issue number7
DOIs
Publication statusPublished - 2010

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