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Ring-Assisted Mach-Zehnder Modulator on the InP Membrane on Silicon Platform

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Abstract

This paper describes the design and fabrication of a slot waveguide ring-assisted Mach-Zehnder modulator (RAMZM) on the InP membrane on Silicon (IMOS) platform. The low-frequency characterization of this modulator reveals that it can achieve a VπLπ product as low as 5.1 V.mm and an extinction ratio equal to 12 dB. The 3-dB electro-optical bandwidth of this modulator is measured to be 8.5 GHz. This paper discusses working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance, and the prospects of this modulator.

Original languageEnglish
Article number10460996
Pages (from-to)4553-4562
Number of pages10
JournalJournal of Lightwave Technology
Volume42
Issue number13
DOIs
Publication statusPublished - 1 Jul 2024

Funding

Manuscript received 27 October 2023; revised 21 January 2024; accepted 18 February 2024. Date of publication 8 March 2024; date of current version 8 July 2024. This work was supported by the Dutch NWO Zwaartekracht under Grant \u201CResearch Center for Integrated Nanophotonics\u201D. (Corresponding author: A. A. Kashi.) A. A. Kashi is with IMEC the Netherlands, HTC 31, 5656 AE Eindhoven, The Netherlands, and also with the Institute of Photonic Integration (IPI), Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands (e-mail: [email protected]).

Funders
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

    Keywords

    • Electro-optic modulators
    • Electro-optical waveguides
    • Electrooptic modulators
    • Integrated optics
    • Modulation
    • optical communication
    • Optical device fabrication
    • optical modulation
    • Optical modulation
    • optical polymers
    • Optical waveguides
    • Plastics

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