RF-distortion in deep-submicron CMOS technologies

R. Van Langevelde, L. F. Tiemeijer, R. J. Havens, M. J. Knitel, R. F.M. Roes, P. H. Woerlee, D. B.M. Klaassen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

57 Citations (Scopus)


The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18μm is verified and further scaling according to the ITRS-roadmap is predicted.

Original languageEnglish
Title of host publication2000 IEEE International Electron Devices Meeting
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Print)0-7803-6438-4
Publication statusPublished - 1 Dec 2000
Externally publishedYes
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 10 Dec 200013 Dec 2000


Conference2000 IEEE International Electron Devices Meeting
CountryUnited States
CitySan Francisco, CA

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  • Cite this

    Van Langevelde, R., Tiemeijer, L. F., Havens, R. J., Knitel, M. J., Roes, R. F. M., Woerlee, P. H., & Klaassen, D. B. M. (2000). RF-distortion in deep-submicron CMOS technologies. In 2000 IEEE International Electron Devices Meeting (pp. 807-810). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IEDM.2000.904440