RF-distortion in deep-submicron CMOS technologies

R. Van Langevelde; L. F. Tiemeijer; R. J. Havens; M. J. Knitel; R. F.M. Roes; P. H. Woerlee; D. B.M. Klaassen

doi:10.1109/IEDM.2000.904440

RF-distortion in deep-submicron CMOS technologies

R. Van Langevelde, L. F. Tiemeijer, R. J. Havens, M. J. Knitel, R. F.M. Roes, P. H. Woerlee, D. B.M. Klaassen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

59 Citations (SciVal)

Abstract

The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18μm is verified and further scaling according to the ITRS-roadmap is predicted.

Original language	English
Title of host publication	2000 IEEE International Electron Devices Meeting
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	807-810
Number of pages	4
ISBN (Print)	0-7803-6438-4
DOIs	https://doi.org/10.1109/IEDM.2000.904440
Publication status	Published - 1 Dec 2000
Externally published	Yes
Event	2000 IEEE International Electron Devices Meeting, IEDM 2000 - San Francisco, United States Duration: 10 Dec 2000 → 13 Dec 2000

Conference

Conference	2000 IEEE International Electron Devices Meeting, IEDM 2000
Country/Territory	United States
City	San Francisco
Period	10/12/00 → 13/12/00

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10.1109/IEDM.2000.904440

Cite this

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title = "RF-distortion in deep-submicron CMOS technologies",

abstract = "The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18μm is verified and further scaling according to the ITRS-roadmap is predicted.",

author = "{Van Langevelde}, R. and Tiemeijer, {L. F.} and Havens, {R. J.} and Knitel, {M. J.} and Roes, {R. F.M.} and Woerlee, {P. H.} and Klaassen, {D. B.M.}",

year = "2000",

month = dec,

day = "1",

doi = "10.1109/IEDM.2000.904440",

language = "English",

isbn = "0-7803-6438-4",

pages = "807--810",

booktitle = "2000 IEEE International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2000 IEEE International Electron Devices Meeting, IEDM 2000 ; Conference date: 10-12-2000 Through 13-12-2000",

}

Van Langevelde, R, Tiemeijer, LF, Havens, RJ, Knitel, MJ, Roes, RFM, Woerlee, PH & Klaassen, DBM 2000, RF-distortion in deep-submicron CMOS technologies. in 2000 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, Piscataway, pp. 807-810, 2000 IEEE International Electron Devices Meeting, IEDM 2000, San Francisco, California, United States, 10/12/00. https://doi.org/10.1109/IEDM.2000.904440

TY - GEN

T1 - RF-distortion in deep-submicron CMOS technologies

AU - Van Langevelde, R.

AU - Tiemeijer, L. F.

AU - Havens, R. J.

AU - Knitel, M. J.

AU - Roes, R. F.M.

AU - Woerlee, P. H.

AU - Klaassen, D. B.M.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18μm is verified and further scaling according to the ITRS-roadmap is predicted.

AB - The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18μm is verified and further scaling according to the ITRS-roadmap is predicted.

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U2 - 10.1109/IEDM.2000.904440

DO - 10.1109/IEDM.2000.904440

M3 - Conference contribution

AN - SCOPUS:0034453901

SN - 0-7803-6438-4

SP - 807

EP - 810

BT - 2000 IEEE International Electron Devices Meeting

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2000 IEEE International Electron Devices Meeting, IEDM 2000

Y2 - 10 December 2000 through 13 December 2000

ER -

RF-distortion in deep-submicron CMOS technologies

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