Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices

B. Casarin; A. Caretta; J. Momand; B. J. Kooi; M.A. Verheijen; V. Bragaglia; R. Calarco; M. Chukalina; X. Yu; J. Robertson; F.R.L. Lange; M. Wuttig; A. Redaelli; E. Varesi; F. Parmigiani; M. Malvestuto

doi:10.1038/srep22353

Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices

B. Casarin, A. Caretta, J. Momand, B. J. Kooi, M.A. Verheijen, V. Bragaglia, R. Calarco, M. Chukalina, X. Yu, J. Robertson, F.R.L. Lange, M. Wuttig, A. Redaelli, E. Varesi, F. Parmigiani, M. Malvestuto

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Abstract

The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb₂Te₃] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.

Original language	English
Article number	22353
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep22353
Publication status	Published - 1 Mar 2016

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Casarin, B., Caretta, A., Momand, J., Kooi, B. J., Verheijen, M. A., Bragaglia, V., Calarco, R., Chukalina, M., Yu, X., Robertson, J., Lange, F. R. L., Wuttig, M., Redaelli, A., Varesi, E., Parmigiani, F., & Malvestuto, M. (2016). Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices. Scientific Reports, 6, Article 22353. https://doi.org/10.1038/srep22353

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abstract = "The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.",

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AU - Casarin, B.

AU - Caretta, A.

AU - Momand, J.

AU - Kooi, B. J.

AU - Verheijen, M.A.

AU - Bragaglia, V.

AU - Calarco, R.

AU - Chukalina, M.

AU - Yu, X.

AU - Robertson, J.

AU - Lange, F.R.L.

AU - Wuttig, M.

AU - Redaelli, A.

AU - Varesi, E.

AU - Parmigiani, F.

AU - Malvestuto, M.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.

AB - The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.

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JF - Scientific Reports

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Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices

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