Abstract
Ion implanted silicon detectors which are specially developed for timing experiments show timing response variations of a few times 100 ps as a function of the position of irradiation. These variations are caused by resistivity variations of a few times 10%. To quantify these resistivity variations depletion depth studies have been performed for a set of detectors. Best timing results are obtained with a high resistivity overdepleted detector.
Original language | English |
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Pages (from-to) | 349-353 |
Number of pages | 5 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 40 |
Issue number | 4 |
DOIs | |
Publication status | Published - Aug 1993 |