Resistivity variations in ion implanted silicon detectors

H.A. Rijken, S.S. Klein, W.C.M. Ligthart, M. J.A. de Voigt, P. Burger

    Research output: Contribution to journalArticleAcademicpeer-review

    2 Citations (Scopus)

    Abstract

    Ion implanted silicon detectors which are specially developed for timing experiments show timing response variations of a few times 100 ps as a function of the position of irradiation. These variations are caused by resistivity variations of a few times 10%. To quantify these resistivity variations depletion depth studies have been performed for a set of detectors. Best timing results are obtained with a high resistivity overdepleted detector.

    Original languageEnglish
    Pages (from-to)349-353
    Number of pages5
    JournalIEEE Transactions on Nuclear Science
    Volume40
    Issue number4
    DOIs
    Publication statusPublished - Aug 1993

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