Resistivity variations in ion implanted silicon detectors

H.A. Rijken; S.S. Klein; W.C.M. Ligthart; M.J.A. de Voigt; P. Burger

doi:10.1109/23.256578

Resistivity variations in ion implanted silicon detectors

H.A. Rijken, S.S. Klein, W.C.M. Ligthart, M.J.A. de Voigt, P. Burger

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

Abstract

Ion implanted silicon detectors which are specially developed for timing experiments show timing response variations of a few times 100 ps as a function of the position of irradiation. These variations are caused by resistivity variations of a few times 10%. To quantify these resistivity variations depletion depth studies have been performed for a set of detectors. Best timing results are obtained with a high resistivity overdepleted detector.

Original language	English
Article number	256578
Pages (from-to)	349-353
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	40
Issue number	4
DOIs	https://doi.org/10.1109/23.256578
Publication status	Published - Aug 1993

Access to Document

10.1109/23.256578

Cite this

@article{215e1e3865fc48ee9cef51cafa1c619d,

title = "Resistivity variations in ion implanted silicon detectors",

abstract = "Ion implanted silicon detectors which are specially developed for timing experiments show timing response variations of a few times 100 ps as a function of the position of irradiation. These variations are caused by resistivity variations of a few times 10%. To quantify these resistivity variations depletion depth studies have been performed for a set of detectors. Best timing results are obtained with a high resistivity overdepleted detector.",

author = "H.A. Rijken and S.S. Klein and W.C.M. Ligthart and {de Voigt}, M.J.A. and P. Burger",

year = "1993",

month = aug,

doi = "10.1109/23.256578",

language = "English",

volume = "40",

pages = "349--353",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers",

number = "4",

}

TY - JOUR

T1 - Resistivity variations in ion implanted silicon detectors

AU - Rijken, H.A.

AU - Klein, S.S.

AU - Ligthart, W.C.M.

AU - de Voigt, M.J.A.

AU - Burger, P.

PY - 1993/8

Y1 - 1993/8

N2 - Ion implanted silicon detectors which are specially developed for timing experiments show timing response variations of a few times 100 ps as a function of the position of irradiation. These variations are caused by resistivity variations of a few times 10%. To quantify these resistivity variations depletion depth studies have been performed for a set of detectors. Best timing results are obtained with a high resistivity overdepleted detector.

AB - Ion implanted silicon detectors which are specially developed for timing experiments show timing response variations of a few times 100 ps as a function of the position of irradiation. These variations are caused by resistivity variations of a few times 10%. To quantify these resistivity variations depletion depth studies have been performed for a set of detectors. Best timing results are obtained with a high resistivity overdepleted detector.

UR - http://www.scopus.com/inward/record.url?scp=0027647358&partnerID=8YFLogxK

U2 - 10.1109/23.256578

DO - 10.1109/23.256578

M3 - Article

AN - SCOPUS:0027647358

VL - 40

SP - 349

EP - 353

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 4

M1 - 256578

ER -

Resistivity variations in ion implanted silicon detectors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this