Resistive switching in organic memories with a spin-coated metal oxide nanoparticle layer

F. Verbakel; S.C.J. Meskers; D.M. Leeuw, de; R.A.J. Janssen

doi:10.1021/jp800624u

Resistive switching in organic memories with a spin-coated metal oxide nanoparticle layer

F. Verbakel, S.C.J. Meskers, D.M. Leeuw, de, R.A.J. Janssen

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Resistive switching is demonstrated in diodes based on spin-coated layers of nanoparticles of Al2O3, CeO2, TiO2, ZrO2, Y2O3, or ZnO and a semiconducting polymer sandwiched between two electrodes. Inclusion of the metal oxide nanoparticles results in nonvolatile electronic memory characteristics that are similar to those observed for the corresponding "bulk" oxide. The major difference is that the nanoparticulate layers do not require a forming step. ZnO and TiO2 can be switched between a high and low resistance state using voltages pulses of opposite polarity, and Al2O3, CeO2, ZrO2, Y2O3 can be switched with both bipolar and unipolar voltage pulses.

Original language	English
Pages (from-to)	5254-5257
Number of pages	4
Journal	Journal of Physical Chemistry C
Volume	112
Issue number	14
DOIs	https://doi.org/10.1021/jp800624u
Publication status	Published - 2008

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abstract = "Resistive switching is demonstrated in diodes based on spin-coated layers of nanoparticles of Al2O3, CeO2, TiO2, ZrO2, Y2O3, or ZnO and a semiconducting polymer sandwiched between two electrodes. Inclusion of the metal oxide nanoparticles results in nonvolatile electronic memory characteristics that are similar to those observed for the corresponding {"}bulk{"} oxide. The major difference is that the nanoparticulate layers do not require a forming step. ZnO and TiO2 can be switched between a high and low resistance state using voltages pulses of opposite polarity, and Al2O3, CeO2, ZrO2, Y2O3 can be switched with both bipolar and unipolar voltage pulses.",

author = "F. Verbakel and S.C.J. Meskers and {Leeuw, de}, D.M. and R.A.J. Janssen",

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T1 - Resistive switching in organic memories with a spin-coated metal oxide nanoparticle layer

AU - Verbakel, F.

AU - Meskers, S.C.J.

AU - Leeuw, de, D.M.

AU - Janssen, R.A.J.

PY - 2008

Y1 - 2008

N2 - Resistive switching is demonstrated in diodes based on spin-coated layers of nanoparticles of Al2O3, CeO2, TiO2, ZrO2, Y2O3, or ZnO and a semiconducting polymer sandwiched between two electrodes. Inclusion of the metal oxide nanoparticles results in nonvolatile electronic memory characteristics that are similar to those observed for the corresponding "bulk" oxide. The major difference is that the nanoparticulate layers do not require a forming step. ZnO and TiO2 can be switched between a high and low resistance state using voltages pulses of opposite polarity, and Al2O3, CeO2, ZrO2, Y2O3 can be switched with both bipolar and unipolar voltage pulses.

AB - Resistive switching is demonstrated in diodes based on spin-coated layers of nanoparticles of Al2O3, CeO2, TiO2, ZrO2, Y2O3, or ZnO and a semiconducting polymer sandwiched between two electrodes. Inclusion of the metal oxide nanoparticles results in nonvolatile electronic memory characteristics that are similar to those observed for the corresponding "bulk" oxide. The major difference is that the nanoparticulate layers do not require a forming step. ZnO and TiO2 can be switched between a high and low resistance state using voltages pulses of opposite polarity, and Al2O3, CeO2, ZrO2, Y2O3 can be switched with both bipolar and unipolar voltage pulses.

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DO - 10.1021/jp800624u

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VL - 112

SP - 5254

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JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 14

ER -

Resistive switching in organic memories with a spin-coated metal oxide nanoparticle layer

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