Resistive switching in nanostructured thin films

H. Silva; H.L. Gomes; Y.G. Pogorelov; P. Stallinga; D.M. Leeuw, de; J.P. Araujo; J.B. Sousa; S.C.J. Meskers; G. Kakazei; S. Cardoso; P.P. Freitas

doi:10.1063/1.3134484

Resistive switching in nanostructured thin films

H. Silva
, H.L. Gomes
, Y.G. Pogorelov
, P. Stallinga
, D.M. Leeuw, de
, J.P. Araujo
, J.B. Sousa
, S.C.J. Meskers
, G. Kakazei
, S. Cardoso
, P.P. Freitas

Research output: Contribution to journal › Article › Academic › peer-review

28 Citations (Scopus)

218 Downloads (Pure)

Abstract

Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.

Original language	English
Article number	202107
Pages (from-to)	202107-1/3
Journal	Applied Physics Letters
Volume	94
Issue number	20
DOIs	https://doi.org/10.1063/1.3134484
Publication status	Published - 2009

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title = "Resistive switching in nanostructured thin films",

abstract = "Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.",

author = "H. Silva and H.L. Gomes and Y.G. Pogorelov and P. Stallinga and \{Leeuw, de\}, D.M. and J.P. Araujo and J.B. Sousa and S.C.J. Meskers and G. Kakazei and S. Cardoso and P.P. Freitas",

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T1 - Resistive switching in nanostructured thin films

AU - Silva, H.

AU - Gomes, H.L.

AU - Pogorelov, Y.G.

AU - Stallinga, P.

AU - Leeuw, de, D.M.

AU - Araujo, J.P.

AU - Sousa, J.B.

AU - Meskers, S.C.J.

AU - Kakazei, G.

AU - Cardoso, S.

AU - Freitas, P.P.

PY - 2009

Y1 - 2009

N2 - Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.

AB - Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.

U2 - 10.1063/1.3134484

DO - 10.1063/1.3134484

M3 - Article

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VL - 94

SP - 202107-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202107

ER -

Resistive switching in nanostructured thin films

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