Resistive switching in nanostructured thin films

H. Silva, H.L. Gomes, Y.G. Pogorelov, P. Stallinga, D.M. Leeuw, de, J.P. Araujo, J.B. Sousa, S.C.J. Meskers, G. Kakazei, S. Cardoso, P.P. Freitas

Research output: Contribution to journalArticleAcademicpeer-review

25 Citations (Scopus)
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Abstract

Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.
Original languageEnglish
Article number202107
Pages (from-to)202107-1/3
JournalApplied Physics Letters
Volume94
Issue number20
DOIs
Publication statusPublished - 2009

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