Abstract
Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.
Original language | English |
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Article number | 202107 |
Pages (from-to) | 202107-1/3 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 20 |
DOIs | |
Publication status | Published - 2009 |