Resistive switching in nanostructured thin films

H. Silva, H.L. Gomes, Y.G. Pogorelov, P. Stallinga, D.M. Leeuw, de, J.P. Araujo, J.B. Sousa, S.C.J. Meskers, G. Kakazei, S. Cardoso, P.P. Freitas

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Abstract

Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.
Original languageEnglish
Article number202107
Pages (from-to)202107-1/3
JournalApplied Physics Letters
Volume94
Issue number20
DOIs
Publication statusPublished - 2009

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