Resistive intrinsic ZnO films deposited by ultrafast spatial ALD for PV applications

N. Nandakumar, S.A.F. Dielissen, D. Garcia-Alonso Garcia, Z. Liu, R. Görtzen, W.M.M. Kessels, A.G. Aberle, B. Hoex

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)
1 Downloads (Pure)

Abstract

Spatial atomic layer deposition (ALD) of intrinsic zinc oxide (i-ZnO) films is scaled up from the laboratory to the industrial level, and the film properties are investigated in detail. A high growth rate of 35 nm/min is achieved. The deposited films are transparent and have an unusually high resistivity of about 100 O · cm. This is attributed to the extremely short precursor exposure and purge duration of spatial ALD (~8 ms), as compared with temporal ALD (~1-10 s). The growth of highly crystalline and nearly stoichiometric i-ZnO films is achieved. This makes these i-ZnO layers ideal for applications as insulating window layers in Cu(In,Ga)Se2 solar cells.
Original languageEnglish
Pages (from-to)1462-1469
JournalIEEE Journal of Photovoltaics
Volume5
Issue number5
DOIs
Publication statusPublished - 2015

Fingerprint

Dive into the research topics of 'Resistive intrinsic ZnO films deposited by ultrafast spatial ALD for PV applications'. Together they form a unique fingerprint.

Cite this