Spatial atomic layer deposition (ALD) of intrinsic zinc oxide (i-ZnO) films is scaled up from the laboratory to the industrial level, and the film properties are investigated in detail. A high growth rate of 35 nm/min is achieved. The deposited films are transparent and have an unusually high resistivity of about 100 O · cm. This is attributed to the extremely short precursor exposure and purge duration of spatial ALD (~8 ms), as compared with temporal ALD (~1-10 s). The growth of highly crystalline and nearly stoichiometric i-ZnO films is achieved. This makes these i-ZnO layers ideal for applications as insulating window layers in Cu(In,Ga)Se2 solar cells.