Research update : Atmospheric pressure spatial atomic layer deposition of ZnO thin films : reactors, doping and devices

R.L.Z. Hoye, D. Muñoz-Rojas, S.F. Nelson, A. Illiberi, P. Poodt, F. Roozeboom, J.L. MacManus-Driscoll

Research output: Contribution to journalArticleAcademicpeer-review

42 Citations (Scopus)
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Abstract

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.
Original languageEnglish
Pages (from-to)040701-
Number of pages13
JournalAPL Materials
Volume3
Issue number4
DOIs
Publication statusPublished - 2015

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