Remote silane plasma chemistry effects and their correlation with a-Si:H film properties

W.M.M. Kessels, A.H.M. Smets, B.A. Korevaar, G.J. Adriaenssens, M.C.M. Van De Sanden, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

17 Citations (Scopus)
1 Downloads (Pure)


A remote silane plasma, capable of depositing solar grade a-Si:H at a rate of 10 nm/s and with an up to ten times higher hole drift mobility than standard a-Si:H, has been investigated by means of several plasma diagnostics. The creation of the different reactive species in the plasma and their contribution to film growth has been analyzed and is correlated with the film properties obtained under various conditions. Furthermore, the first results on a n-i-p solar cell with the intrinsic a-Si:H film deposited by this remote plasma are presented.

Original languageEnglish
Title of host publicationAmorphous and heterogeneous silicon thin films : fundamentals to devices - 1999 : symposium held April 5-9, 1999, San Francisco, California, U.S.A.
EditorsH.M. Branz
Place of PublicationWarrendale
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1-55899-464-5
Publication statusPublished - 1 Dec 1999
Event1999 MRS Spring Meeting & Exhibit - San Francisco, United States
Duration: 5 Apr 19999 Apr 1999

Publication series

NameMaterials Research Society Symposium - Proceedings
ISSN (Print)0272-9172


Conference1999 MRS Spring Meeting & Exhibit
Country/TerritoryUnited States
CitySan Francisco
Internet address


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