Abstract
A remote silane plasma, capable of depositing solar grade a-Si:H at a rate of 10 nm/s and with an up to ten times higher hole drift mobility than standard a-Si:H, has been investigated by means of several plasma diagnostics. The creation of the different reactive species in the plasma and their contribution to film growth has been analyzed and is correlated with the film properties obtained under various conditions. Furthermore, the first results on a n-i-p solar cell with the intrinsic a-Si:H film deposited by this remote plasma are presented.
Original language | English |
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Title of host publication | Amorphous and heterogeneous silicon thin films : fundamentals to devices - 1999 : symposium held April 5-9, 1999, San Francisco, California, U.S.A. |
Editors | H.M. Branz |
Place of Publication | Warrendale |
Publisher | Materials Research Society |
Pages | 25-30 |
Number of pages | 6 |
ISBN (Print) | 1-55899-464-5 |
Publication status | Published - 1 Dec 1999 |
Event | 1999 MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 5 Apr 1999 → 9 Apr 1999 https://www.mrs.org/spring1999 |
Publication series
Name | Materials Research Society Symposium - Proceedings |
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Volume | 557 |
ISSN (Print) | 0272-9172 |
Conference
Conference | 1999 MRS Spring Meeting & Exhibit |
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Country/Territory | United States |
City | San Francisco |
Period | 5/04/99 → 9/04/99 |
Internet address |