TY - JOUR
T1 - Remote plasma deposited silicon dioxide-like film densification by means of RF substrate biasing: film chemistry and morphology
AU - Milella, A.
AU - Creatore, M.
AU - Blauw, M.A.
AU - Sanden, van de, M.C.M.
PY - 2007
Y1 - 2007
N2 - Silicon dioxide-like films were deposited from a mixt. of O2/hexamethyldisiloxane injected in an Ar-fed expanding thermal plasma. In order to increase the film d., a radiofrequency (rf, 13.56 MHz) external substrate biasing was applied during deposition, thus delivering ion bombardment during film growth. Fourier transform IR spectroscopy shows that the film densification at increasing substrate bias occurs via condensation of silanol groups to form Si-O-Si bridges, accompanied by a decrease of the disorder in the film network. Ion bombardment leads also to the smoothening of film surface as quantified by at. force microscopy measurements, which point out to a decrease in film root mean square roughness by as much as 80% (0.19 nm). [on SciFinder (R)]
AB - Silicon dioxide-like films were deposited from a mixt. of O2/hexamethyldisiloxane injected in an Ar-fed expanding thermal plasma. In order to increase the film d., a radiofrequency (rf, 13.56 MHz) external substrate biasing was applied during deposition, thus delivering ion bombardment during film growth. Fourier transform IR spectroscopy shows that the film densification at increasing substrate bias occurs via condensation of silanol groups to form Si-O-Si bridges, accompanied by a decrease of the disorder in the film network. Ion bombardment leads also to the smoothening of film surface as quantified by at. force microscopy measurements, which point out to a decrease in film root mean square roughness by as much as 80% (0.19 nm). [on SciFinder (R)]
U2 - 10.1002/ppap.200700007
DO - 10.1002/ppap.200700007
M3 - Article
VL - 4
SP - 621
EP - 628
JO - Plasma Processes and Polymers
JF - Plasma Processes and Polymers
SN - 1612-8850
IS - 6
ER -