Remote plasma atomic layer deposition of Co3O4 thin films

M.E. Donders, M.C.M. Sanden, van de, W.M.M. Kessels, P.H.L. Notten, H.C.M. Knoops

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)
3 Downloads (Pure)

Abstract

Cobalt oxide has been deposited with remote plasma ALD over a wide temperature window (100 - 400 °C), using CoCp2 as cobalt precursor and with a remote O2 plasma as oxidant source. This novel combination resulted in the deposition of high density (6.2 g/cm3), stoichiometric Co3O4 with an electrical resistivity between 0.5 and 5.3 O cm. Several merits have been identified for this process. Compared to the literature, the temperature window was widened to 100 - 400 °C and the growth per cycle was higher at 0.05 nm/cycle, almost independent of the substrate temperature. Investigation of the material properties revealed cubic Co3O4 films with a preferential (111) direction for all temperatures with an increasing crystallinity with temperature. Furthermore, the plasma assisted process resulted in smooth Co3O4 films with a roughness of = 1 nm for all substrate temperatures and film thicknesses (5 -65 nm) investigated. Mass spectrometry measurements reveal a combustion-like reaction process.
Original languageEnglish
Title of host publicationAtomic layer deposition applications 5 : Proceedings of the 216th ECS meeting, 4 - 9 October 2009, Vienna, Austria
EditorsS. Bent, S. Gendt, De
Place of PublicationPennington, NJ
PublisherElectrochemical Society, Inc.
Pages39-47
ISBN (Print)978-156677741-4
Publication statusPublished - 2009

Publication series

NameECS Transactions
Volume25
ISSN (Print)1938-6737

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