Remote plasma and thermal ALD of platinum and platinum oxide films

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

Platinum and platinum oxide films were deposited using thermal and remote plasma ALD. The combination of MeCpPtMe3 precursor and O2 gas or a short (0.5 s) O2 plasma exposure resulted in high purity, low-resistivity (15 microOhm cm), high-density (21 g/cm3), cubic platinum films. The combination of MeCpPtMe3 precursor with a longer (5 s) O2 plasma exposure resulted in semi-conductive PtO2 films with a band gap of ~1.5 eV. The long nucleation delay observed with the thermal process could be overcome by using the remote plasma process where atomic oxygen is provided from the gas phase. The ALD process dependence on substrate temperature was investigated, where both the thermal and the remote plasma Pt process revealed a temperature window from 200 C to 300 C and the remote plasma PtO2 process had a temperature window from 100 C to 300 C.
Original languageEnglish
Title of host publicationAtomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008
EditorsA. Londergan, S. De Gendt
Place of PublicationPennington, NJ, USA
PublisherThe Electrochemical Society
Pages209-218
ISBN (Print)978-1-56677-650-9
DOIs
Publication statusPublished - 2008
Event4th Atomic Layer Deposition Application Symposium - Honolulu, HI, United States
Duration: 12 Oct 200717 Oct 2008

Publication series

NameECS Transactions
Volume16
ISSN (Print)1938-6737

Conference

Conference4th Atomic Layer Deposition Application Symposium
CountryUnited States
CityHonolulu, HI
Period12/10/0717/10/08
OtherPart of 214th ECS meeting

Fingerprint

platinum oxides
oxide films
platinum
thermal plasmas
temperature
purity
nucleation
vapor phases
electrical resistivity
oxygen
gases

Cite this

Knoops, H. C. M., Mackus, A. J. M., Donders, M. E., Sanden, van de, M. C. M., Notten, P. H. L., & Kessels, W. M. M. (2008). Remote plasma and thermal ALD of platinum and platinum oxide films. In A. Londergan, & S. De Gendt (Eds.), Atomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008 (pp. 209-218). (ECS Transactions; Vol. 16). Pennington, NJ, USA: The Electrochemical Society. https://doi.org/10.1149/1.2979996
Knoops, H.C.M. ; Mackus, A.J.M. ; Donders, M.E. ; Sanden, van de, M.C.M. ; Notten, P.H.L. ; Kessels, W.M.M. / Remote plasma and thermal ALD of platinum and platinum oxide films. Atomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008. editor / A. Londergan ; S. De Gendt. Pennington, NJ, USA : The Electrochemical Society, 2008. pp. 209-218 (ECS Transactions).
@inproceedings{54a8dd58df044265b2a4afd8e2f43328,
title = "Remote plasma and thermal ALD of platinum and platinum oxide films",
abstract = "Platinum and platinum oxide films were deposited using thermal and remote plasma ALD. The combination of MeCpPtMe3 precursor and O2 gas or a short (0.5 s) O2 plasma exposure resulted in high purity, low-resistivity (15 microOhm cm), high-density (21 g/cm3), cubic platinum films. The combination of MeCpPtMe3 precursor with a longer (5 s) O2 plasma exposure resulted in semi-conductive PtO2 films with a band gap of ~1.5 eV. The long nucleation delay observed with the thermal process could be overcome by using the remote plasma process where atomic oxygen is provided from the gas phase. The ALD process dependence on substrate temperature was investigated, where both the thermal and the remote plasma Pt process revealed a temperature window from 200 C to 300 C and the remote plasma PtO2 process had a temperature window from 100 C to 300 C.",
author = "H.C.M. Knoops and A.J.M. Mackus and M.E. Donders and {Sanden, van de}, M.C.M. and P.H.L. Notten and W.M.M. Kessels",
year = "2008",
doi = "10.1149/1.2979996",
language = "English",
isbn = "978-1-56677-650-9",
series = "ECS Transactions",
publisher = "The Electrochemical Society",
pages = "209--218",
editor = "A. Londergan and {De Gendt}, S.",
booktitle = "Atomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008",

}

Knoops, HCM, Mackus, AJM, Donders, ME, Sanden, van de, MCM, Notten, PHL & Kessels, WMM 2008, Remote plasma and thermal ALD of platinum and platinum oxide films. in A Londergan & S De Gendt (eds), Atomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008. ECS Transactions, vol. 16, The Electrochemical Society, Pennington, NJ, USA, pp. 209-218, 4th Atomic Layer Deposition Application Symposium, Honolulu, HI, United States, 12/10/07. https://doi.org/10.1149/1.2979996

Remote plasma and thermal ALD of platinum and platinum oxide films. / Knoops, H.C.M.; Mackus, A.J.M.; Donders, M.E.; Sanden, van de, M.C.M.; Notten, P.H.L.; Kessels, W.M.M.

Atomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008. ed. / A. Londergan; S. De Gendt. Pennington, NJ, USA : The Electrochemical Society, 2008. p. 209-218 (ECS Transactions; Vol. 16).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Remote plasma and thermal ALD of platinum and platinum oxide films

AU - Knoops, H.C.M.

AU - Mackus, A.J.M.

AU - Donders, M.E.

AU - Sanden, van de, M.C.M.

AU - Notten, P.H.L.

AU - Kessels, W.M.M.

PY - 2008

Y1 - 2008

N2 - Platinum and platinum oxide films were deposited using thermal and remote plasma ALD. The combination of MeCpPtMe3 precursor and O2 gas or a short (0.5 s) O2 plasma exposure resulted in high purity, low-resistivity (15 microOhm cm), high-density (21 g/cm3), cubic platinum films. The combination of MeCpPtMe3 precursor with a longer (5 s) O2 plasma exposure resulted in semi-conductive PtO2 films with a band gap of ~1.5 eV. The long nucleation delay observed with the thermal process could be overcome by using the remote plasma process where atomic oxygen is provided from the gas phase. The ALD process dependence on substrate temperature was investigated, where both the thermal and the remote plasma Pt process revealed a temperature window from 200 C to 300 C and the remote plasma PtO2 process had a temperature window from 100 C to 300 C.

AB - Platinum and platinum oxide films were deposited using thermal and remote plasma ALD. The combination of MeCpPtMe3 precursor and O2 gas or a short (0.5 s) O2 plasma exposure resulted in high purity, low-resistivity (15 microOhm cm), high-density (21 g/cm3), cubic platinum films. The combination of MeCpPtMe3 precursor with a longer (5 s) O2 plasma exposure resulted in semi-conductive PtO2 films with a band gap of ~1.5 eV. The long nucleation delay observed with the thermal process could be overcome by using the remote plasma process where atomic oxygen is provided from the gas phase. The ALD process dependence on substrate temperature was investigated, where both the thermal and the remote plasma Pt process revealed a temperature window from 200 C to 300 C and the remote plasma PtO2 process had a temperature window from 100 C to 300 C.

U2 - 10.1149/1.2979996

DO - 10.1149/1.2979996

M3 - Conference contribution

SN - 978-1-56677-650-9

T3 - ECS Transactions

SP - 209

EP - 218

BT - Atomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008

A2 - Londergan, A.

A2 - De Gendt, S.

PB - The Electrochemical Society

CY - Pennington, NJ, USA

ER -

Knoops HCM, Mackus AJM, Donders ME, Sanden, van de MCM, Notten PHL, Kessels WMM. Remote plasma and thermal ALD of platinum and platinum oxide films. In Londergan A, De Gendt S, editors, Atomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008. Pennington, NJ, USA: The Electrochemical Society. 2008. p. 209-218. (ECS Transactions). https://doi.org/10.1149/1.2979996