Remote plasma and thermal ALD of platinum and platinum oxide films

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)
6 Downloads (Pure)

Abstract

Platinum and platinum oxide films were deposited using thermal and remote plasma ALD. The combination of MeCpPtMe3 precursor and O2 gas or a short (0.5 s) O2 plasma exposure resulted in high purity, low-resistivity (15 microOhm cm), high-density (21 g/cm3), cubic platinum films. The combination of MeCpPtMe3 precursor with a longer (5 s) O2 plasma exposure resulted in semi-conductive PtO2 films with a band gap of ~1.5 eV. The long nucleation delay observed with the thermal process could be overcome by using the remote plasma process where atomic oxygen is provided from the gas phase. The ALD process dependence on substrate temperature was investigated, where both the thermal and the remote plasma Pt process revealed a temperature window from 200 C to 300 C and the remote plasma PtO2 process had a temperature window from 100 C to 300 C.
Original languageEnglish
Title of host publicationAtomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008
EditorsA. Londergan, S. De Gendt
Place of PublicationPennington, NJ, USA
PublisherElectrochemical Society, Inc.
Pages209-218
ISBN (Print)978-1-56677-650-9
DOIs
Publication statusPublished - 2008
Event4th Atomic Layer Deposition Application Symposium - Honolulu, HI, United States
Duration: 12 Oct 200717 Oct 2008

Publication series

NameECS Transactions
Volume16
ISSN (Print)1938-6737

Conference

Conference4th Atomic Layer Deposition Application Symposium
CountryUnited States
CityHonolulu, HI
Period12/10/0717/10/08
OtherPart of 214th ECS meeting

Fingerprint Dive into the research topics of 'Remote plasma and thermal ALD of platinum and platinum oxide films'. Together they form a unique fingerprint.

Cite this