Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors

E. Langereis; R.F.H. Roijmans; F. Roozeboom; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1149/1.3522768

Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors

E. Langereis, R.F.H. Roijmans, F. Roozeboom, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Contribution to journal › Article › Academic › peer-review

32 Citations (Scopus)

256 Downloads (Pure)

Abstract

Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.

Original language	English
Pages (from-to)	G34-G38
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	2
DOIs	https://doi.org/10.1149/1.3522768
Publication status	Published - 2011

Access to Document

10.1149/1.3522768

Metis246523Final published version, 532 KB

Cite this

@article{2aef916940404f5f8ed9959c68659287,

title = "Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors",

abstract = "Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.",

author = "E. Langereis and R.F.H. Roijmans and F. Roozeboom and {Sanden, van de}, M.C.M. and W.M.M. Kessels",

year = "2011",

doi = "10.1149/1.3522768",

language = "English",

volume = "158",

pages = "G34--G38",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors

AU - Langereis, E.

AU - Roijmans, R.F.H.

AU - Roozeboom, F.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2011

Y1 - 2011

N2 - Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.

AB - Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.

U2 - 10.1149/1.3522768

DO - 10.1149/1.3522768

M3 - Article

SN - 0013-4651

VL - 158

SP - G34-G38

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors

Abstract

Access to Document

Fingerprint

Cite this