Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors

E. Langereis, R.F.H. Roijmans, F. Roozeboom, M.C.M. Sanden, van de, W.M.M. Kessels

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Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.
Original languageEnglish
Pages (from-to)G34-G38
JournalJournal of the Electrochemical Society
Issue number2
Publication statusPublished - 2011


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