Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors

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Abstract

Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.
Original languageEnglish
Pages (from-to)G34-G38
JournalJournal of the Electrochemical Society
Volume158
Issue number2
DOIs
Publication statusPublished - 2011

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Plasma deposition
Atomic layer deposition
Strontium
Spectroscopic ellipsometry
Amorphous films
Titanium
Leakage currents
Stars
Permittivity
Plasmas
Microstructure
Chemical analysis
strontium titanium oxide

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@article{2aef916940404f5f8ed9959c68659287,
title = "Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors",
abstract = "Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.",
author = "E. Langereis and R.F.H. Roijmans and F. Roozeboom and {Sanden, van de}, M.C.M. and W.M.M. Kessels",
year = "2011",
doi = "10.1149/1.3522768",
language = "English",
volume = "158",
pages = "G34--G38",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors. / Langereis, E.; Roijmans, R.F.H.; Roozeboom, F.; Sanden, van de, M.C.M.; Kessels, W.M.M.

In: Journal of the Electrochemical Society, Vol. 158, No. 2, 2011, p. G34-G38.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors

AU - Langereis, E.

AU - Roijmans, R.F.H.

AU - Roozeboom, F.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2011

Y1 - 2011

N2 - Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.

AB - Remote plasma atomic layer deposition (ALD) of SrTiO3 films with different [Sr]/[Ti] ratios is reported, employing Star-Ti [(pentamethylcyclopentadienyl)trimethoxy-titanium, (CpMe5)Ti(OMe)3] and Hyper-Sr [bis(trisisopropylcyclopentadienyl)-strontium with 1,2-dimethoxyethane adduct, Sr(iPr3Cp)2DME] precursors and O2 plasma. The as-deposited films were amorphous, but crystallized after post-deposition anneal above 500°C. For annealed SrTiO3 films with [Sr]/[Ti]=1.3 and a thickness of 50 nm, a high dielectric constant k>80 and low leakage current of ~10-7 A/cm2 at 1 V were obtained. It is demonstrated that changes in the composition and microstructure are apparent in the optical dielectric function of the SrTiO3 films, as obtained by spectroscopic ellipsometry.

U2 - 10.1149/1.3522768

DO - 10.1149/1.3522768

M3 - Article

VL - 158

SP - G34-G38

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 2

ER -