Remote p-doping of InAs nanowires

H.-Y. Li, O. Wunnicke, M.T. Borgström, W.G.G. Immink, M.H.M. Weert, van, M.A. Verheijen, E.P.A.M. Bakkers

Research output: Contribution to journalArticleAcademicpeer-review

70 Citations (Scopus)


We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor-liquid-solid (VLS) mechanism. Remote doping of III-V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that shielding with a p-doped InP shell compensates for the built-in potential and donates free holes to the InAs core. Moreover, the off-current in field-effect devices can be reduced up to 6 orders of magnitude. The effect of shielding critically depends on the thickness of the InP capping layer and the dopant concentration in the shell. © 2007 American Chemical Society. U7 - Export Date: 2 August 2010 U7 - Source: Scopus
Original languageEnglish
Pages (from-to)1144-1148
Number of pages5
JournalNano Letters
Issue number5
Publication statusPublished - 2007


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