Reliability of magnetic tunnel-junctions

H. Boeve, W. Oepts, E. Girgis, J. Schelten, R. Coehoorn, J. de Boeck, G. Borghs

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)


In magnetic tunnel-junctions large conductance variations are observed for low magnetic fields, which makes them attractive for various applications. The key issue for a high performant device is the quality of its ultra-thin insulating spacer layer. Currently, several oxidation methods for making junctions are studied. In this work, we present a first approach to the reliability and breakdown phenomena in these devices.

Original languageEnglish
Title of host publicationESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
EditorsR.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
Place of PublicationPiscataway
PublisherIEEE Computer Society
Number of pages4
ISBN (Electronic)9782863322451
ISBN (Print)2-86332-245-1
Publication statusPublished - 1 Jan 1999
Externally publishedYes
Event29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
Duration: 13 Sept 199915 Sept 1999


Conference29th European Solid-State Device Research Conference, ESSDERC 1999


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