Reliability modeling for ultrathin gate oxides subject to logistic degradation processes with random onset time

H. Peng, Q. Feng

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Abstract

With device dimension downscaling, the oxide thickness reduction less than 3¿nm in a metal–oxide–semiconductor structure has led to important changes in degradation mechanisms and failure modes. After the first breakdown event of ultrathin gate oxides, the leakage current presents a less dramatic and noisy continuous breakdown mode called progressive breakdown. In this article, we characterize the overall breakdown process of ultrathin gate oxides as a randomized logistic degradation process with a random onset time. The explicit result of the lifetime distribution is derived on the basis of this logistic degradation model. A numerical example is provided to calculate the lifetime distribution. The simulated lifetime data of our model fits lognormal distribution better than the Weibull distribution, which agrees with the experimental work in literature.
Original languageEnglish
Pages (from-to)709-718
JournalQuality and Reliability Engineering International
Volume29
Issue number5
DOIs
Publication statusPublished - 2013

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Logistics
Degradation
Oxides
Weibull distribution
Leakage currents
Failure modes
Modeling
Breakdown

Cite this

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Reliability modeling for ultrathin gate oxides subject to logistic degradation processes with random onset time. / Peng, H.; Feng, Q.

In: Quality and Reliability Engineering International, Vol. 29, No. 5, 2013, p. 709-718.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Reliability modeling for ultrathin gate oxides subject to logistic degradation processes with random onset time

AU - Peng, H.

AU - Feng, Q.

PY - 2013

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N2 - With device dimension downscaling, the oxide thickness reduction less than 3¿nm in a metal–oxide–semiconductor structure has led to important changes in degradation mechanisms and failure modes. After the first breakdown event of ultrathin gate oxides, the leakage current presents a less dramatic and noisy continuous breakdown mode called progressive breakdown. In this article, we characterize the overall breakdown process of ultrathin gate oxides as a randomized logistic degradation process with a random onset time. The explicit result of the lifetime distribution is derived on the basis of this logistic degradation model. A numerical example is provided to calculate the lifetime distribution. The simulated lifetime data of our model fits lognormal distribution better than the Weibull distribution, which agrees with the experimental work in literature.

AB - With device dimension downscaling, the oxide thickness reduction less than 3¿nm in a metal–oxide–semiconductor structure has led to important changes in degradation mechanisms and failure modes. After the first breakdown event of ultrathin gate oxides, the leakage current presents a less dramatic and noisy continuous breakdown mode called progressive breakdown. In this article, we characterize the overall breakdown process of ultrathin gate oxides as a randomized logistic degradation process with a random onset time. The explicit result of the lifetime distribution is derived on the basis of this logistic degradation model. A numerical example is provided to calculate the lifetime distribution. The simulated lifetime data of our model fits lognormal distribution better than the Weibull distribution, which agrees with the experimental work in literature.

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DO - 10.1002/qre.1421

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