Relaxation-oscillation phenomena in an injection-locked semiconductor laser

P.C. de Jagher, W.A. van der Graaf, D. Lenstra

Research output: Contribution to journalArticleAcademicpeer-review

30 Citations (Scopus)

Abstract

Relaxation-oscillation (RO) phenomena in a semiconductor diode laser with external optical injection are studied. We extend the concept of 'locked dynamics' to include excited ROs. A two-variable scalar function W is constructed, from which the 'slow' (transient) dynamics of the RO can be derived as well as an earlier published 'potential' model. The function W is used to investigate bifurcations of the RO dynamics in the locking region. The location of the Hopf and the period-doubling bifurcations are in good, respectively fair, agreement with numerical simulations. A bistability is recovered and the dependence on the linewidth enhancement parameter ('the α-parameter') is studied.

Original languageEnglish
Pages (from-to)805-822
Number of pages18
JournalJournal of Optics B: Quantum and Semiclassical Optics
Volume8
Issue number4
DOIs
Publication statusPublished - 1 Dec 1996
Externally publishedYes

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