Abstract
We report the first investigations on the effect of a strong magnetic field on the energy relaxation of hot carriers in GaAs/AlGaAs quantum wells studied with picosecond time resolved photoluminescence. The energy relaxation is significantly increased at strong magnetic fields (20 T), while at lower field values (8 T) it is reduced with respect to B = 0 T. We discuss the possible origins of this dramatic change in energy relaxation.
Original language | English |
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Pages (from-to) | 527-530 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 57 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1 Jan 1986 |
Externally published | Yes |