Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment

A.H.M. Smets; M.C.M. Sanden, van de

doi:10.1103/PhysRevB.76.073202

Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment

A.H.M. Smets, M.C.M. Sanden, van de

Plasma & Materials Processing

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Abstract

We propose a model which describes the frequency shift (Delta wSM) of the stretching mode (SM) of Si-H monohydrides (MH's) when incorporated in hydrogenated amorphous silicon (a-Si:H) with respect to the unscreened MH SM at .apprx.2099+-2 cm-1. The model is based on an effective medium approxn. of the dielec. using multiple Lorentz-Lorenz dielecs., corresponding to a host dielec. with MH's embedded in cavities, sep. The Delta wSM as derived in this model correctly predicts all bulk MH-SM positions in a-Si:H films and relates it directly to the nanostructure of the MH bulk configurations. [on SciFinder (R)]

Original language	English
Article number	073202
Pages (from-to)	073202-1/4
Journal	Physical Review B
Volume	76
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.76.073202
Publication status	Published - 2007

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title = "Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment",

abstract = "We propose a model which describes the frequency shift (Delta wSM) of the stretching mode (SM) of Si-H monohydrides (MH's) when incorporated in hydrogenated amorphous silicon (a-Si:H) with respect to the unscreened MH SM at .apprx.2099+-2 cm-1. The model is based on an effective medium approxn. of the dielec. using multiple Lorentz-Lorenz dielecs., corresponding to a host dielec. with MH's embedded in cavities, sep. The Delta wSM as derived in this model correctly predicts all bulk MH-SM positions in a-Si:H films and relates it directly to the nanostructure of the MH bulk configurations. [on SciFinder (R)]",

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AB - We propose a model which describes the frequency shift (Delta wSM) of the stretching mode (SM) of Si-H monohydrides (MH's) when incorporated in hydrogenated amorphous silicon (a-Si:H) with respect to the unscreened MH SM at .apprx.2099+-2 cm-1. The model is based on an effective medium approxn. of the dielec. using multiple Lorentz-Lorenz dielecs., corresponding to a host dielec. with MH's embedded in cavities, sep. The Delta wSM as derived in this model correctly predicts all bulk MH-SM positions in a-Si:H films and relates it directly to the nanostructure of the MH bulk configurations. [on SciFinder (R)]

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Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment

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