Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s

W. M.M. Kessels; A. H.M. Smets; J. P.M. Hoefnagels; M. G.H. Boogaarts; D. C. Schram; M. C.M. Van de Sanden

doi:10.1557/PROC-609-A4.2

Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s

W. M.M. Kessels
, A. H.M. Smets
, J. P.M. Hoefnagels
, M. G.H. Boogaarts
, D. C. Schram
, M. C.M. Van de Sanden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

From investigations on the SiH₃ and SiH radical density and the surface reaction probability in a remote Ar-H₂-SiH₄ plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH₃ and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH₃ (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH₃ dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Original language	English
Title of host publication	Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A
Editors	R.W. Collins
Place of Publication	Warrendale, PA, USA
Publisher	Materials Research Society
Pages	A4.2-1/6
ISBN (Print)	1-558-99517-X
DOIs	https://doi.org/10.1557/PROC-609-A4.2
Publication status	Published - 1 Dec 2000
Event	Amorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States Duration: 24 Apr 2000 → 28 Apr 2000

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	609
ISSN (Print)	0272-9172

Conference

Conference	Amorphous and Heterogeneus Silicon Thin Films-2000
Country/Territory	United States
City	San Francisco, CA
Period	24/04/00 → 28/04/00

Funding

B.A. Korevaar, C. Smit, and E.A.G. Hamers are gratefully acknowledged for their contribution to the measurements. This work has been financially supported by NWO, NOVEM and FOM.

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10.1557/PROC-609-A4.2

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Kessels, W. M. M., Smets, A. H. M., Hoefnagels, J. P. M., Boogaarts, M. G. H., Schram, D. C., & Van de Sanden, M. C. M. (2000). Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s. In R. W. Collins (Ed.), Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A (pp. A4.2-1/6). (Materials Research Society Symposium Proceedings; Vol. 609). Materials Research Society. https://doi.org/10.1557/PROC-609-A4.2

Kessels, W. M.M. ; Smets, A. H.M. ; Hoefnagels, J. P.M. et al. / Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s. Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A. editor / R.W. Collins. Warrendale, PA, USA : Materials Research Society, 2000. pp. A4.2-1/6 (Materials Research Society Symposium Proceedings).

@inproceedings{094e776c15dd4d94bda64127ba72a829,

title = "Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 {\AA}/s",

abstract = "From investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 {\AA}/s for conditions where film growth is governed by SiH3 (contribution ∼90\%) and where SiH has only a minor contribution (∼2\%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.",

author = "Kessels, \{W. M.M.\} and Smets, \{A. H.M.\} and Hoefnagels, \{J. P.M.\} and Boogaarts, \{M. G.H.\} and Schram, \{D. C.\} and \{Van de Sanden\}, \{M. C.M.\}",

year = "2000",

month = dec,

day = "1",

doi = "10.1557/PROC-609-A4.2",

language = "English",

isbn = "1-558-99517-X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "A4.2--1/6",

editor = "R.W. Collins",

booktitle = "Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A",

address = "United States",

note = "Amorphous and Heterogeneus Silicon Thin Films-2000 ; Conference date: 24-04-2000 Through 28-04-2000",

}

Kessels, WMM, Smets, AHM, Hoefnagels, JPM, Boogaarts, MGH, Schram, DC & Van de Sanden, MCM 2000, Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s. in RW Collins (ed.), Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A. Materials Research Society Symposium Proceedings, vol. 609, Materials Research Society, Warrendale, PA, USA, pp. A4.2-1/6, Amorphous and Heterogeneus Silicon Thin Films-2000, San Francisco, CA, United States, 24/04/00. https://doi.org/10.1557/PROC-609-A4.2

Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s. / Kessels, W. M.M.; Smets, A. H.M.; Hoefnagels, J. P.M. et al.
Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A. ed. / R.W. Collins. Warrendale, PA, USA: Materials Research Society, 2000. p. A4.2-1/6 (Materials Research Society Symposium Proceedings; Vol. 609).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s

AU - Kessels, W. M.M.

AU - Smets, A. H.M.

AU - Hoefnagels, J. P.M.

AU - Boogaarts, M. G.H.

AU - Schram, D. C.

AU - Van de Sanden, M. C.M.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - From investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

AB - From investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

UR - https://www.scopus.com/pages/publications/0034429669

U2 - 10.1557/PROC-609-A4.2

DO - 10.1557/PROC-609-A4.2

M3 - Conference contribution

SN - 1-558-99517-X

T3 - Materials Research Society Symposium Proceedings

SP - A4.2-1/6

BT - Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A

A2 - Collins, R.W.

PB - Materials Research Society

CY - Warrendale, PA, USA

T2 - Amorphous and Heterogeneus Silicon Thin Films-2000

Y2 - 24 April 2000 through 28 April 2000

ER -

Kessels WMM, Smets AHM, Hoefnagels JPM, Boogaarts MGH, Schram DC , Van de Sanden MCM. Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s. In Collins RW, editor, Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A. Warrendale, PA, USA: Materials Research Society. 2000. p. A4.2-1/6. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-609-A4.2

Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s

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