Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s

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Abstract

From investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Original languageEnglish
Title of host publicationAmorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A
EditorsR.W. Collins
Place of PublicationWarrendale, PA, USA
PublisherMaterials Research Society
PagesA4.2-1/6
ISBN (Print)1-558-99517-X
DOIs
Publication statusPublished - 1 Dec 2000
EventAmorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States
Duration: 24 Apr 200028 Apr 2000

Publication series

NameMaterials Research Society Symposium Proceedings
Volume609
ISSN (Print)0272-9172

Conference

ConferenceAmorphous and Heterogeneus Silicon Thin Films-2000
CountryUnited States
CitySan Francisco, CA
Period24/04/0028/04/00

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