Regenerative pulsations in semiconductor etalon due to competition between carrier generation and heating effects on band filling

V.I. Tolstikhin, A.V. Grigoryants, T.G. Roer, van de

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Abstract

Competition between carrier concentration and effective temperature effects on the dielectric function of a degenerate semiconductor in a spectral range near its fundamental absorption edge is suggested as a mechanism for regenerative pulsations in a stationary pumped optical etalon. The origin of self-pulsations is similar to that in a bistable etalon with competing concentration and thermal optical nonlinearities, but, due to its purely electronic nature, the proposed mechanism provides a way for a much higher repetition frequency, probably in the GHz range. The model of the phenomenon and modeling examples are all related to a Fabry–Perot resonator filled with the bulk n+-In0.53Ga0.47As as an active medium.
Original languageEnglish
Pages (from-to)2023-2030
Number of pages8
JournalJournal of Applied Physics
Volume82
Issue number5
DOIs
Publication statusPublished - 1997

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