Reflow of deep UV resist for line edge roughness reduction in InP membrane waveguides

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Abstract

A reflow process for photoresist is described that aims to reduce propagation loss and static phase error in InP membrane waveguides. We demonstrate that vacuum UV exposure followed by exposure to acetone vapor smoothens the resist and significantly reduces the line edge roughness.
Original languageEnglish
Title of host publicationProceedings of the 23rd Annual Symposium of the IEEE Photonics Society Benelux Chapter
Pages165-168
Number of pages4
Publication statusPublished - 2018
Event23rd Annual Symposium of the IEEE Photonics Society Benelux Chapter - Paleis der Academiën, Brussels, Belgium
Duration: 15 Nov 201816 Nov 2018

Conference

Conference23rd Annual Symposium of the IEEE Photonics Society Benelux Chapter
CountryBelgium
CityBrussels
Period15/11/1816/11/18

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