Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures

B. Docter; E.J. Geluk; T. Smet, de; F. Karouta; M.K. Smit

Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures

B. Docter
, E.J. Geluk
, T. Smet, de
, F. Karouta
, M.K. Smit

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A three-level masking process has been developed for etching DBR gratings in InP/InGaAsP double hetero-structures. The masking consists of a ZEP/Cr/SiOx layer stack. The ZEP layer is used to open the Cr which is a good mask for etching anisotropically the SiOx layer. The InP-based double heterostructure is etched in an ICP process using Cl2:Ar:H2. With this process deep etched waveguides are simultaneously etched with the DBR gratings with various numbers of periods (1 to 5). 2 µm wide waveguides show a loss of 3 dB/cm and the reflectivity of a 2 period DBR grating was found to be 80%.

Original language	English
Title of host publication	Proceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium
Editors	M. Delqué, Ph. Emplit, S.P. Gorza, P. Kockaert, X.J.M. Leijtens
Place of Publication	Brussels
Publisher	IEEE/LEOS
Pages	111-114
ISBN (Print)	978-2-9600753-0-4
Publication status	Published - 2007
Event	12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium - Brussels, Belgium Duration: 17 Dec 2007 → 18 Dec 2007

Conference

Conference	12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium
Country/Territory	Belgium
City	Brussels
Period	17/12/07 → 18/12/07

Cite this

Docter, B., Geluk, E. J., Smet, de, T., Karouta, F., & Smit, M. K. (2007). Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures. In M. Delqué, P. Emplit, S. P. Gorza, P. Kockaert, & X. J. M. Leijtens (Eds.), Proceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium (pp. 111-114). IEEE/LEOS.

Docter, B. ; Geluk, E.J. ; Smet, de, T. et al. / Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures. Proceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium. editor / M. Delqué ; Ph. Emplit ; S.P. Gorza ; P. Kockaert ; X.J.M. Leijtens. Brussels : IEEE/LEOS, 2007. pp. 111-114

@inproceedings{532b9e9bf71f44948fe4452f81e862b7,

title = "Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures",

abstract = "A three-level masking process has been developed for etching DBR gratings in InP/InGaAsP double hetero-structures. The masking consists of a ZEP/Cr/SiOx layer stack. The ZEP layer is used to open the Cr which is a good mask for etching anisotropically the SiOx layer. The InP-based double heterostructure is etched in an ICP process using Cl2:Ar:H2. With this process deep etched waveguides are simultaneously etched with the DBR gratings with various numbers of periods (1 to 5). 2 µm wide waveguides show a loss of 3 dB/cm and the reflectivity of a 2 period DBR grating was found to be 80\%.",

author = "B. Docter and E.J. Geluk and \{Smet, de\}, T. and F. Karouta and M.K. Smit",

year = "2007",

language = "English",

isbn = "978-2-9600753-0-4",

pages = "111--114",

editor = "M. Delqu{\'e} and Ph. Emplit and S.P. Gorza and P. Kockaert and X.J.M. Leijtens",

booktitle = "Proceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium",

publisher = "IEEE/LEOS",

note = "12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium ; Conference date: 17-12-2007 Through 18-12-2007",

}

Docter, B, Geluk, EJ, Smet, de, T, Karouta, F & Smit, MK 2007, Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures. in M Delqué, P Emplit, SP Gorza, P Kockaert & XJM Leijtens (eds), Proceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium. IEEE/LEOS, Brussels, pp. 111-114, 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium, Brussels, Belgium, 17/12/07.

Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures. / Docter, B.; Geluk, E.J.; Smet, de, T. et al.
Proceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium. ed. / M. Delqué; Ph. Emplit; S.P. Gorza; P. Kockaert; X.J.M. Leijtens. Brussels: IEEE/LEOS, 2007. p. 111-114.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures

AU - Docter, B.

AU - Geluk, E.J.

AU - Smet, de, T.

AU - Karouta, F.

AU - Smit, M.K.

PY - 2007

Y1 - 2007

N2 - A three-level masking process has been developed for etching DBR gratings in InP/InGaAsP double hetero-structures. The masking consists of a ZEP/Cr/SiOx layer stack. The ZEP layer is used to open the Cr which is a good mask for etching anisotropically the SiOx layer. The InP-based double heterostructure is etched in an ICP process using Cl2:Ar:H2. With this process deep etched waveguides are simultaneously etched with the DBR gratings with various numbers of periods (1 to 5). 2 µm wide waveguides show a loss of 3 dB/cm and the reflectivity of a 2 period DBR grating was found to be 80%.

AB - A three-level masking process has been developed for etching DBR gratings in InP/InGaAsP double hetero-structures. The masking consists of a ZEP/Cr/SiOx layer stack. The ZEP layer is used to open the Cr which is a good mask for etching anisotropically the SiOx layer. The InP-based double heterostructure is etched in an ICP process using Cl2:Ar:H2. With this process deep etched waveguides are simultaneously etched with the DBR gratings with various numbers of periods (1 to 5). 2 µm wide waveguides show a loss of 3 dB/cm and the reflectivity of a 2 period DBR grating was found to be 80%.

M3 - Conference contribution

SN - 978-2-9600753-0-4

SP - 111

EP - 114

BT - Proceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium

A2 - Delqué, M.

A2 - Emplit, Ph.

A2 - Gorza, S.P.

A2 - Kockaert, P.

A2 - Leijtens, X.J.M.

PB - IEEE/LEOS

CY - Brussels

T2 - 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium

Y2 - 17 December 2007 through 18 December 2007

ER -

Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures

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